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AP2192ASG-13

Diodes Incorporated · Power Distribution Switches · SOIC-8

AP2192ASG-13 from Diodes Incorporated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin, the device ground reference for the two switches.
2 IN power_in Voltage input pin, specified for 2.7 V to 5.5 V operation with an absolute maximum input voltage of 6.5 V.
3 EN1 input Switch 1 enable input, active low on AP2182A and active high on AP2192A, with VIL maximum 0.8 V and VIH minimum 2 V.
4 EN2 input Switch 2 enable input, active low on AP2182A and active high on AP2192A, with VIL maximum 0.8 V and VIH minimum 2 V.
5 FLG2 output Switch 2 overcurrent and overtemperature fault report; open-drain output that goes active low after the 7 ms typical deglitch time when triggered.
6 OUT2 power_out Switch 2 voltage output, with a recommended maximum continuous load current of 1.5 A and a typical 2.0 A current limit per channel.
7 OUT1 power_out Switch 1 voltage output, with a recommended maximum continuous load current of 1.5 A and a typical 2.0 A current limit per channel.
8 FLG1 output Switch 1 overcurrent and overtemperature fault report; open-drain output that goes active low after the 7 ms typical deglitch time when triggered.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOIC-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage VIN 2.7 5.5 V 3
Output Current IOUT 0 1.5 A 3
High-Level Input Voltage on EN VIH 2 V 3
Low-Level Input Voltage on EN VIL 0 0.8 V 3
Operating Ambient Temperature Range TA -40 85 °C 3
ESD Protection, Human Body Model ESD HBM 2 kV Human Body Model 3
ESD Protection, Machine Model ESD MM 300 V Machine Model 3
Input Voltage VIN 6.5 V 3
Enable Voltage VEN, VFLG 6.5 V 3
Storage Temperature Range TST -65 150 °C 3
Maximum Junction Temperature TJ(MAX) 150 °C 3
Input UVLO VUVLO 1.6 2 2.4 V 4
Input Shutdown Current ISHDN 0.1 1 µA Disabled, IOUT = 0 4
Input Quiescent Current IQ 115 180 µA Dual Enabled, IOUT = 0 4
Input Leakage Current ILEAK 1 µA Disabled, OUT grounded 4
Reverse Leakage Current IREV 0.01 0.1 µA Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 4
Switch On-Resistance, SO-8 RDS(ON) 90 110 mΩ VIN = 5V, IOUT = 1.5A, TA = +25°C 4
Switch On-Resistance RDS(ON) 135 mΩ VIN = 5V, IOUT = 1.5A, -40°C ≤ TA ≤ +85°C 4
Switch On-Resistance, SO-8 RDS(ON) 110 130 mΩ VIN = 3.3V, IOUT = 1.5A, TA = +25°C 4
Switch On-Resistance RDS(ON) 170 mΩ VIN = 3.3V, IOUT = 1.5A, -40°C ≤ TA ≤ +85°C 4
Overload Current Limit ILIMIT 1.6 2 2.4 A VIN = 5V, VOUT = 4V, CL = 10µF, -40°C ≤ TA ≤ +85°C 4
Ganged Overload Current Limit ILIMIT_G 3.2 4 4.8 A VIN = 5V, VOUT = 4.6V, OUT1 & OUT2 tied together, CL = 10µF, -40°C ≤ TA ≤ +85°C 4
Ganged Short-Circuit Current IOS_G 3.2 4 4.8 A OUT1 & OUT2 connected to ground, device enabled into short-circuit, CL = 10µF 4
EN Input Logic Low Voltage VIL 0.8 V VIN = 2.7V to 5.5V 4
EN Input Logic High Voltage VIH 2 V VIN = 2.7V to 5.5V 4
EN Input Leakage ISINK 1 µA VEN = 0V to 5.5V 4
Output Leakage Current ILEAK-O 0.5 1 µA Disabled, VOUT = 0V 4
Output Turn-On Rise Time TR 0.6 1.5 ms CL = 1µF, RLOAD = 5Ω 4
Output Turn-Off Fall Time TF 0.05 0.3 ms CL = 1µF, RLOAD = 5Ω 4
Output Turn-On Delay Time TD(ON) 0.2 0.5 ms CL = 100µF, RLOAD = 5Ω 4
Output Turn-Off Delay Time TD(OFF) 0.1 0.3 ms CL = 100µF, RLOAD = 5Ω 4
FLG Output FET On-Resistance RFLG 20 40 Ω IFLG = 10mA 4
FLG Off Current IFOH 0.01 1 µA VFLG = 5V 4
FLG Blanking Time TBlank 4 7 15 ms CL = 10µF 4
Current Limiting Trigger Threshold ITrig 2.5 A Output Current Slew rate (<100A/s), CL = 10µF 4
Ganged Current Limiting Trigger Threshold ITrig_G 5 A OUT1 & OUT2 tied together, Output Current Slew rate (<100A/s), CL = 10µF 4
Short-Circuit Current per Channel IOS 2 A OUTx connected to ground, device enabled into short circuit, CL = 10µF 4
Short-Circuit Response Time TSHORT 2 µs VOUT = 0V to IOUT = ILIMIT (output shorted to ground) 4
Discharge Resistance RDIS 100 Ω VIN = 5V, disabled, IOUT = 1mA 4
Thermal Shutdown Threshold TSHDN 140 °C Enabled, RLOAD = 1kΩ 4
Thermal Shutdown Hysteresis THYS 25 °C 4
Thermal Resistance Junction-to-Ambient, SO-8 θJA 115 °C/W Note 7: FR-4 substrate PCB with minimum recommended pad layout 4

CAD (KiCad official)

  • Symbol: AP2192ASG-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ap2192asg-13-etched.step / ap2192asg-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap2192asg-13.step / ap2192asg-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (16 pp, sha256 e687e6ce6e5393f3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF