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AOTF7N70-VB

VBsemi Elec · MOSFETs · TO-220F

AOTF7N70-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±30 V (absolute maximum), and VGS(th) is 2 V min to 4 V max at ID = 250 µA.
2 D passive Drain terminal; drain-source voltage is rated 700 V (minimum breakdown at VGS = 0 V, ID = 250 µA) with continuous drain current of 7 A at TC = 25 °C.
3 S passive Source terminal; continuous source-drain diode current IS is 7 A and pulsed diode forward current ISM is 18 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 700 V 1
Gate-source voltage VGS -30 30 V 1
Continuous drain current ID 7 A TJ = 150 °C; VGS at 10 V; TC = 25 °C 1
Continuous drain current ID 5 A TJ = 150 °C; VGS at 10 V; TC = 100 °C 1
Pulsed drain current IDM 18 A 1
Linear derating factor 0.63 W/°C 1
Single pulse avalanche energy EAS 56 mJ 1
Maximum power dissipation PD 31 W 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Drain-source voltage slope dV/dt 37 V/ns TJ = 125 °C 1
Reverse diode dV/dt dV/dt 27 V/ns 1
Soldering recommendations (peak temperature) 300 °C For 10 s 1
Mounting torque M3 screw 0.6 Nm 1
Maximum junction-to-ambient RthJA 43 65 °C/W 2
Maximum junction-to-case (drain) RthJC 3.1 4 °C/W 2
Drain-source breakdown voltage VDS 700 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage (N) VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ±20 V 2
Gate-source leakage IGSS -1 1 μA VGS = ±30 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 700 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 560 V, VGS = 0 V, TJ = 125 °C 2
Gate input resistance Rg 0.4 1.4 2.7 Ω f = 1 MHz, open drain 2
Total gate charge Qg 24 48 nC VGS = 10 V, ID = 3 A, VDS = 520 V 2
Input capacitance Ciss 410 820 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Turn-on delay time td(on) 14 28 ns VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1 2
Rise time tr 12 24 ns VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1 2
Turn-off delay time td(off) 30 60 ns VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1 2
Fall time tf 20 40 ns VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1 2
Continuous source-drain diode current IS 7 A MOSFET symbol showing integral reverse p-n junction diode 2
Pulsed diode forward current ISM 18 A 2
Diode forward voltage VSD 0.83 1.3 V TJ = 25 °C, IS = 3 A, VGS = 0 V 2
Reverse recovery time trr 118 237 474 ns TJ = 25 °C, IF = IS = 3 A, dI/dt = 100 A/μs, VR = 25 V 2

CAD (KiCad official)

  • Symbol: AOTF7N70-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 3f4296c15ce8dab0, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF