AOTF7N70-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; gate-source voltage is rated ±30 V (absolute maximum), and VGS(th) is 2 V min to 4 V max at ID = 250 µA.
2	D	passive	Drain terminal; drain-source voltage is rated 700 V (minimum breakdown at VGS = 0 V, ID = 250 µA) with continuous drain current of 7 A at TC = 25 °C.
3	S	passive	Source terminal; continuous source-drain diode current IS is 7 A and pulsed diode forward current ISM is 18 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-220F
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			700	V		1
Gate-source voltage	VGS	-30		30	V		1
Continuous drain current	ID			7	A	TJ = 150 °C; VGS at 10 V; TC = 25 °C	1
Continuous drain current	ID			5	A	TJ = 150 °C; VGS at 10 V; TC = 100 °C	1
Pulsed drain current	IDM			18	A		1
Linear derating factor				0.63	W/°C		1
Single pulse avalanche energy	EAS			56	mJ		1
Maximum power dissipation	PD			31	W		1
Operating junction and storage temperature range	TJ, Tstg	-55		150	°C		1
Drain-source voltage slope	dV/dt			37	V/ns	TJ = 125 °C	1
Reverse diode dV/dt	dV/dt			27	V/ns		1
Soldering recommendations (peak temperature)				300	°C	For 10 s	1
Mounting torque M3 screw				0.6	Nm		1
Maximum junction-to-ambient	RthJA		43	65	°C/W		2
Maximum junction-to-case (drain)	RthJC		3.1	4	°C/W		2
Drain-source breakdown voltage	VDS	700			V	VGS = 0 V, ID = 250 μA	2
Gate-source threshold voltage (N)	VGS(th)	2		4	V	VDS = VGS, ID = 250 μA	2
Gate-source leakage	IGSS	-100		100	nA	VGS = ±20 V	2
Gate-source leakage	IGSS	-1		1	μA	VGS = ±30 V	2
Zero gate voltage drain current	IDSS			1	μA	VDS = 700 V, VGS = 0 V	2
Zero gate voltage drain current	IDSS			10	μA	VDS = 560 V, VGS = 0 V, TJ = 125 °C	2
Gate input resistance	Rg	0.4	1.4	2.7	Ω	f = 1 MHz, open drain	2
Total gate charge	Qg		24	48	nC	VGS = 10 V, ID = 3 A, VDS = 520 V	2
Input capacitance	Ciss		410	820	pF	VGS = 0 V, VDS = 100 V, f = 1 MHz	2
Turn-on delay time	td(on)		14	28	ns	VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1	2
Rise time	tr		12	24	ns	VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1	2
Turn-off delay time	td(off)		30	60	ns	VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1	2
Fall time	tf		20	40	ns	VDD = 560 V, ID = 3 A, VGS = 10 V, Rg = 9.1	2
Continuous source-drain diode current	IS			7	A	MOSFET symbol showing integral reverse p-n junction diode	2
Pulsed diode forward current	ISM			18	A		2
Diode forward voltage	VSD		0.83	1.3	V	TJ = 25 °C, IS = 3 A, VGS = 0 V	2
Reverse recovery time	trr	118	237	474	ns	TJ = 25 °C, IF = IS = 3 A, dI/dt = 100 A/μs, VR = 25 V	2

CAD (KiCad official)

Symbol: AOTF7N70-VB
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (8 pp, sha256 3f4296c15ce8dab0, retrieved 2026-11-12, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AOTF7N70-VB

Verified AOTF7N70-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README