# AOT8N65

**Alpha & Omega Semicon** · MOSFETs · TO-220

AOT8N65 from Alpha & Omega Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal, rated for a maximum gate-source voltage of ±30V and driven at VGS=10V for the RDS(ON) specification. |
| 2 | D | passive | Drain terminal, rated for 650V drain-source voltage (750V at 150°C) and 8A continuous drain current at TC=25°C. |
| 3 | S | passive | Source terminal, with a body diode rated for 8A maximum continuous current and 32A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 650 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 8 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 32 | A |  | 1 |
| Power Dissipation | PD |  |  | 208 | W | TC=25°C | 1 |
| Derate above 25°C |  |  |  | 1.67 | W/°C |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Maximum Junction-to-Ambient | RθJA |  |  | 65 | °C/W | Note A,D | 1 |
| Maximum Case-to-sink | RθCS |  | 0.5 |  | °C/W |  | 1 |
| Maximum Junction-to-Case | RθJC |  |  | 0.6 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 750 |  |  | V | ID=250µA, VGS=0V, TJ=150°C | 2 |
| Breakdown voltage temperature coefficient | BVDSS/ΔTJ |  | 0.7 |  | V/°C | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=650V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS=520V, TJ=125°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±30V | 2 |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.91 | 1.15 | Ω | VGS=10V, ID=4A | 2 |
| Forward Transconductance | gFS |  | 11 |  | S | VDS=40V, ID=4A | 2 |
| Diode Forward Voltage | VSD |  | 0.74 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 8 | A |  | 2 |
| Maximum Body-Diode Pulsed Current | ISM |  |  | 32 | A |  | 2 |
| Input Capacitance | Ciss | 930 | 1165 | 1400 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | 80 | 101 | 120 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 7 | 9 | 11 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate resistance | Rg | 1.8 | 3.7 | 5.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 18.5 | 23.5 | 28 | nC | VGS=10V, VDS=520V, ID=8A | 2 |
| Gate Source Charge | Qgs | 5 | 6.2 | 7.5 | nC | VGS=10V, VDS=520V, ID=8A | 2 |
| Gate Drain Charge | Qgd | 7.5 | 9.5 | 11.5 | nC | VGS=10V, VDS=520V, ID=8A | 2 |
| Turn-On DelayTime | tD(on) |  | 26 |  | ns | VGS=10V, VDS=325V, ID=8A, RG=25Ω | 2 |
| Turn-On Rise Time | tr |  | 51 |  | ns | VGS=10V, VDS=325V, ID=8A, RG=25Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 65 |  | ns | VGS=10V, VDS=325V, ID=8A, RG=25Ω | 2 |
| Turn-Off Fall Time | tf |  | 43 |  | ns | VGS=10V, VDS=325V, ID=8A, RG=25Ω | 2 |
| Body Diode Reverse Recovery Time | trr | 235 | 295 | 355 | ns | IF=8A, dI/dt=100A/µs, VDS=100V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 4 | 5 | 6 | µC | IF=8A, dI/dt=100A/µs, VDS=100V | 2 |

## CAD (KiCad official)

- Symbol: `AOT8N65`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `aot8n65-etched.step` / `aot8n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aot8n65.step` / `aot8n65.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aot8n65-datasheet.pdf) (6 pp, sha256 `ece292c721d38ed0`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aot8n65-datasheet.pdf)