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AOT8N65

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Alpha & Omega Semicon MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AOT8N65

Alpha & Omega Semicon · MOSFETs · TO-220

AOT8N65 from Alpha & Omega Semicon, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, rated for a maximum gate-source voltage of ±30V and driven at VGS=10V for the RDS(ON) specification.
2 D passive Drain terminal, rated for 650V drain-source voltage (750V at 150°C) and 8A continuous drain current at TC=25°C.
3 S passive Source terminal, with a body diode rated for 8A maximum continuous current and 32A pulsed.

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 8 A TC=25°C 1
Continuous Drain Current ID 5 A TC=100°C 1
Pulsed Drain Current IDM 32 A 1
Power Dissipation PD 208 W TC=25°C 1
Derate above 25°C 1.67 W/°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1/8" from case for 5 seconds 1
Maximum Junction-to-Ambient RθJA 65 °C/W Note A,D 1
Maximum Case-to-sink RθCS 0.5 °C/W 1
Maximum Junction-to-Case RθJC 0.6 °C/W 1
Drain-Source Breakdown Voltage BVDSS 650 V ID=250µA, VGS=0V, TJ=25°C 2
Drain-Source Breakdown Voltage BVDSS 750 V ID=250µA, VGS=0V, TJ=150°C 2
Breakdown voltage temperature coefficient BVDSS/ΔTJ 0.7 V/°C ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS=520V, TJ=125°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±30V 2
Gate Threshold Voltage VGS(th) 3 4 5 V VDS=5V, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 0.91 1.15 Ω VGS=10V, ID=4A 2
Forward Transconductance gFS 11 S VDS=40V, ID=4A 2
Diode Forward Voltage VSD 0.74 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 8 A 2
Maximum Body-Diode Pulsed Current ISM 32 A 2
Input Capacitance Ciss 930 1165 1400 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 80 101 120 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 7 9 11 pF VGS=0V, VDS=25V, f=1MHz 2
Gate resistance Rg 1.8 3.7 5.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 18.5 23.5 28 nC VGS=10V, VDS=520V, ID=8A 2
Gate Source Charge Qgs 5 6.2 7.5 nC VGS=10V, VDS=520V, ID=8A 2
Gate Drain Charge Qgd 7.5 9.5 11.5 nC VGS=10V, VDS=520V, ID=8A 2
Turn-On DelayTime tD(on) 26 ns VGS=10V, VDS=325V, ID=8A, RG=25Ω 2
Turn-On Rise Time tr 51 ns VGS=10V, VDS=325V, ID=8A, RG=25Ω 2
Turn-Off DelayTime tD(off) 65 ns VGS=10V, VDS=325V, ID=8A, RG=25Ω 2
Turn-Off Fall Time tf 43 ns VGS=10V, VDS=325V, ID=8A, RG=25Ω 2
Body Diode Reverse Recovery Time trr 235 295 355 ns IF=8A, dI/dt=100A/µs, VDS=100V 2
Body Diode Reverse Recovery Charge Qrr 4 5 6 µC IF=8A, dI/dt=100A/µs, VDS=100V 2

CAD (KiCad official)

  • Symbol: AOT8N65
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: aot8n65-etched.step / aot8n65-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aot8n65.step / aot8n65.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256 ece292c721d38ed0, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF