component
AOSS21115C
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Alpha & Omega Semicon MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOSS21115C
Alpha & Omega Semicon · MOSFETs · SOT-23-3
AOSS21115C from Alpha & Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the gate-source voltage VGS is rated ±8V. |
| 2 | S | passive | Source of the MOSFET; maximum body-diode continuous current IS is rated -2A. |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage VDS is rated -20V and continuous drain current is -4.5A at VGS=-4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250mA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | μA | TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.15 | -0.55 | -0.95 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 40 | mΩ | VGS=-4.5V, ID=-4.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 43 | 52 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 42 | 55 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 54 | 72 | mΩ | VGS=-1.8V, ID=-3.5A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | 2 | |||
| Gate Resistance | Rg | 15 | 30 | Ω | f=1MHz | 2 | |
| Total Gate Charge | Qg | 8.5 | 17 | nC | VGS=-4.5V, VDS=-10V, ID=-4.5A | 2 | |
| Drain-Source Voltage | VDS | -20 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -4.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RqJA | 70 | 100 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RqJA | 90 | 125 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RqJL | 63 | 80 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AOSS21115C - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
aoss21115c-etched.step/aoss21115c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aoss21115c.step/aoss21115c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (10 pp, sha256
ccc4ad37da15d7c4, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOSS21115C
**Alpha & Omega Semicon** · MOSFETs · SOT-23-3
AOSS21115C from Alpha & Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the gate-source voltage VGS is rated ±8V. |
| 2 | S | passive | Source of the MOSFET; maximum body-diode continuous current IS is rated -2A. |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage VDS is rated -20V and continuous drain current is -4.5A at VGS=-4.5V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | ID=-250mA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | μA | TJ=55°C | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VDS=0V, VGS=±8V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.15 | -0.55 | -0.95 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 33 | 40 | mΩ | VGS=-4.5V, ID=-4.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 43 | 52 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 42 | 55 | mΩ | VGS=-2.5V, ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 54 | 72 | mΩ | VGS=-1.8V, ID=-3.5A | 2 |
| Diode Forward Voltage | VSD | | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -2 | A | | 2 |
| Gate Resistance | Rg | | 15 | 30 | Ω | f=1MHz | 2 |
| Total Gate Charge | Qg | | 8.5 | 17 | nC | VGS=-4.5V, VDS=-10V, ID=-4.5A | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | | | -4.5 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | -3.5 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | -18 | A | | 1 |
| Power Dissipation | PD | | | 1.3 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 0.8 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RqJA | | 70 | 100 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RqJA | | 90 | 125 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RqJL | | 63 | 80 | °C/W | Steady-State | 1 |
## CAD (KiCad official)
- Symbol: `AOSS21115C`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `aoss21115c-etched.step` / `aoss21115c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aoss21115c.step` / `aoss21115c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha & Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590309925923549184) (10 pp, sha256 `ccc4ad37da15d7c4`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aoss21115c-datasheet.pdf)