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Generated by kicad-footprint-generator · KiCad file format 20260206

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AOSS21115C

Alpha & Omega Semicon · MOSFETs · SOT-23-3

AOSS21115C from Alpha & Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the P-channel MOSFET; the gate-source voltage VGS is rated ±8V.
2	S	passive	Source of the MOSFET; maximum body-diode continuous current IS is rated -2A.
3	D	passive	Drain of the MOSFET; drain-source voltage VDS is rated -20V and continuous drain current is -4.5A at VGS=-4.5V.

Key specifications

Parameter	Value
Manufacturer	Alpha & Omega Semicon
Package	SOT-23-3
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	-20			V	ID=-250mA, VGS=0V	2
Zero Gate Voltage Drain Current	IDSS			-1	μA	VDS=-20V, VGS=0V	2
Zero Gate Voltage Drain Current	IDSS			-5	μA	TJ=55°C	2
Gate-Body Leakage Current	IGSS	-10		10	μA	VDS=0V, VGS=±8V	2
Gate Threshold Voltage	VGS(th)	-0.15	-0.55	-0.95	V	VDS=VGS, ID=-250mA	2
Static Drain-Source On-Resistance	RDS(ON)		33	40	mΩ	VGS=-4.5V, ID=-4.5A	2
Static Drain-Source On-Resistance	RDS(ON)		43	52	mΩ	TJ=125°C	2
Static Drain-Source On-Resistance	RDS(ON)		42	55	mΩ	VGS=-2.5V, ID=-4A	2
Static Drain-Source On-Resistance	RDS(ON)		54	72	mΩ	VGS=-1.8V, ID=-3.5A	2
Diode Forward Voltage	VSD		-0.7	-1	V	IS=-1A, VGS=0V	2
Maximum Body-Diode Continuous Current	IS			-2	A		2
Gate Resistance	Rg		15	30	Ω	f=1MHz	2
Total Gate Charge	Qg		8.5	17	nC	VGS=-4.5V, VDS=-10V, ID=-4.5A	2
Drain-Source Voltage	VDS			-20	V	TA=25°C	1
Gate-Source Voltage	VGS	-8		8	V		1
Continuous Drain Current	ID			-4.5	A	TA=25°C	1
Continuous Drain Current	ID			-3.5	A	TA=70°C	1
Pulsed Drain Current	IDM			-18	A		1
Power Dissipation	PD			1.3	W	TA=25°C	1
Power Dissipation	PD			0.8	W	TA=70°C	1
Junction and Storage Temperature Range	TJ, TSTG	-55		150	°C		1
Maximum Junction-to-Ambient	RqJA		70	100	°C/W	t ≤ 10s	1
Maximum Junction-to-Ambient	RqJA		90	125	°C/W	Steady-State	1
Maximum Junction-to-Lead	RqJL		63	80	°C/W	Steady-State	1

CAD (KiCad official)

Symbol: AOSS21115C
Footprint: Package_TO_SOT_SMD:SOT-23-3
3D model: SOT-23-3 (KiCad packages3D, STEP)
3D model files: aoss21115c-etched.step / aoss21115c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aoss21115c.step / aoss21115c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Alpha & Omega Semicon datasheet (10 pp, sha256 ccc4ad37da15d7c4, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF