# AOSP66920

**Alpha & Omega Semicon** · MOSFETs · SOIC-8

AOSP66920 from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the 100V N-channel MOSFET, tied with pins 2 and 3 on the package. |
| 2 | S | passive | Source of the 100V N-channel MOSFET, tied with pins 1 and 3 on the package. |
| 3 | S | passive | Source of the 100V N-channel MOSFET, tied with pins 1 and 2 on the package. |
| 4 | G | input | Gate, rated ±20V maximum gate-source voltage, with VGS(th) of 1.5V to 2.5V and logic-level drive specified at 4.5V and 10V. |
| 5 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 6, 7 and 8. |
| 6 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | ID=250mA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | μA | VDS=100V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 7 | 8.5 | mΩ | VGS=10V, ID=13.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 12 | 14.5 | mΩ | VGS=10V, ID=13.5A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.8 | 11 | mΩ | VGS=4.5V, ID=11.5A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 4 | A |  | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Gate resistance | Rg | 0.5 | 1.1 | 1.8 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 35 | 50 | nC | VGS=10V, VDS=50V, ID=13.5A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 16.7 | 25 | nC | VGS=4.5V, VDS=50V, ID=13.5A | 2 |
| Forward Transconductance | gFS |  | 60 |  | S | VDS=5V, ID=13.5A | 2 |
| Input Capacitance | Ciss |  | 2500 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 485 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 13 |  | pF | VGS=0V, VDS=50V, f=1MHz | 2 |
| Gate Source Charge | Qgs |  | 8 |  | nC | VGS=10V, VDS=50V, ID=13.5A | 2 |
| Gate Drain Charge | Qgd |  | 5 |  | nC | VGS=10V, VDS=50V, ID=13.5A | 2 |
| Output Charge | Qoss |  | 44 |  | nC | VGS=0V, VDS=50V | 2 |
| Turn-On DelayTime | tD(on) |  | 10 |  | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 |
| Turn-On Rise Time | tr |  | 4 |  | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 |
| Turn-Off DelayTime | tD(off) |  | 31 |  | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 |
| Turn-Off Fall Time | tf |  | 6 |  | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 |
| Body Diode Reverse Recovery Time | trr |  | 30 |  | ns | IF=13.5A, di/dt=500A/ms | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 150 |  | nC | IF=13.5A, di/dt=500A/ms | 2 |
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 13.5 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 10.5 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 54 | A |  | 1 |
| Avalanche Current | IAS |  |  | 38 | A |  | 1 |
| Avalanche energy | EAS |  |  | 72 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RqJA |  | 31 | 40 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RqJA |  | 59 | 75 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RqJL |  | 16 | 24 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AOSP66920`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `aosp66920-etched.step` / `aosp66920-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aosp66920.step` / `aosp66920.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aosp66920-datasheet.pdf) (5 pp, sha256 `ba786a75ae57ff25`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aosp66920-datasheet.pdf)