component
AOSP66920
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| aosp66920-etched.glb | 8d ago |
| aosp66920-etched.step | 8d ago |
| aosp66920-hero.glb | 8d ago |
| aosp66920-hero.overlay.json | 8d ago |
| aosp66920.glb | 8d ago |
| aosp66920.kicad_mod | 8d ago |
| aosp66920.kicad_sym | 8d ago |
| aosp66920.lbr | 8d ago |
| aosp66920.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
AOSP66920
Alpha & Omega Semicon · MOSFETs · SOIC-8
AOSP66920 from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the 100V N-channel MOSFET, tied with pins 2 and 3 on the package. |
| 2 | S | passive | Source of the 100V N-channel MOSFET, tied with pins 1 and 3 on the package. |
| 3 | S | passive | Source of the 100V N-channel MOSFET, tied with pins 1 and 2 on the package. |
| 4 | G | input | Gate, rated ±20V maximum gate-source voltage, with VGS(th) of 1.5V to 2.5V and logic-level drive specified at 4.5V and 10V. |
| 5 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 6, 7 and 8. |
| 6 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain, rated 100V VDS maximum and 13.5A continuous at TA=25°C, tied with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250mA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=100V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 8.5 | mΩ | VGS=10V, ID=13.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 14.5 | mΩ | VGS=10V, ID=13.5A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.8 | 11 | mΩ | VGS=4.5V, ID=11.5A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Gate resistance | Rg | 0.5 | 1.1 | 1.8 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 35 | 50 | nC | VGS=10V, VDS=50V, ID=13.5A | 2 | |
| Total Gate Charge (4.5V) | Qg | 16.7 | 25 | nC | VGS=4.5V, VDS=50V, ID=13.5A | 2 | |
| Forward Transconductance | gFS | 60 | S | VDS=5V, ID=13.5A | 2 | ||
| Input Capacitance | Ciss | 2500 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 485 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 13 | pF | VGS=0V, VDS=50V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 8 | nC | VGS=10V, VDS=50V, ID=13.5A | 2 | ||
| Gate Drain Charge | Qgd | 5 | nC | VGS=10V, VDS=50V, ID=13.5A | 2 | ||
| Output Charge | Qoss | 44 | nC | VGS=0V, VDS=50V | 2 | ||
| Turn-On DelayTime | tD(on) | 10 | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 | ||
| Turn-On Rise Time | tr | 4 | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 | ||
| Turn-Off DelayTime | tD(off) | 31 | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 | ||
| Turn-Off Fall Time | tf | 6 | ns | VGS=10V, VDS=50V, RL=3.7W, RGEN=3W | 2 | ||
| Body Diode Reverse Recovery Time | trr | 30 | ns | IF=13.5A, di/dt=500A/ms | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 150 | nC | IF=13.5A, di/dt=500A/ms | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 13.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 10.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 54 | A | 1 | |||
| Avalanche Current | IAS | 38 | A | 1 | |||
| Avalanche energy | EAS | 72 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RqJA | 31 | 40 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RqJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RqJL | 16 | 24 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AOSP66920 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
aosp66920-etched.step/aosp66920-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aosp66920.step/aosp66920.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256
ba786a75ae57ff25, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).