# AOSP21321-HXY

**HXY MOSFET** · MOSFETs · SOP-8

AOSP21321-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS rated -30V, ID -11A). |
| 2 | S | passive | Source of the P-channel MOSFET (VDS rated -30V, ID -11A). |
| 3 | S | passive | Source of the P-channel MOSFET (VDS rated -30V, ID -11A). |
| 4 | G | input | Gate of the P-channel MOSFET, with VGS maximum of ±20V and a threshold of -1.0V to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET (pulsed drain current -40A). |
| 6 | D | passive | Drain of the P-channel MOSFET (pulsed drain current -40A). |
| 7 | D | passive | Drain of the P-channel MOSFET (pulsed drain current -40A). |
| 8 | D | passive | Drain of the P-channel MOSFET (pulsed drain current -40A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | -11 | A | TA=25°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | -40 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 3.7 | W | TA=25°C | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a |  |  | 33.8 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS=0V, ID= -250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS= -30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 13 | 16 | mΩ | VGS= -10V, ID= -10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 18 | 27 | mΩ | VGS= -4.5V, ID= -5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -11 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | -40 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS= -15A | 2 |
| Input Capacitance | Ciss |  | 1330 |  | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 183 |  | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 156 |  | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg |  | 22 |  | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Gate-Source Charge | Qgs |  | 1 |  | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Gate-Drain (Miller) Charge | Qgd |  | 1.8 |  | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Turn-on Delay Time | td(on) |  | 9 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Turn-on Rise Time | tr |  | 13 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Turn-off Delay Time | td(off) |  | 48 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Turn-off Fall Time | tf |  | 20 |  | ns | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 2 |
| Reverse Recovery Time | trr |  | 64 |  | ns | TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs | 2 |
| Reverse Recovery Charge | Qrr |  | 25 |  | nC | TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs | 2 |

## CAD (KiCad official)

- Symbol: `AOSP21321-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `aosp21321-hxy-etched.step` / `aosp21321-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aosp21321-hxy.step` / `aosp21321-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/aosp21321-hxy-datasheet.pdf) (7 pp, sha256 `cccf97b5d3a7ecf3`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aosp21321-hxy-datasheet.pdf)