component

AOSP21321-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaosp21321-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers aosp21321-hxy: viewers · Ray 12d ago
aosp21321-hxy-etched.glb Publish 0.1.0 · Ray 12d ago
aosp21321-hxy-etched.step aosp21321-hxy: factory component page (tier=lcsc) · Ray 12d ago
aosp21321-hxy-hero.glb aosp21321-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
aosp21321-hxy-hero.overlay.json Publish 0.1.0 · Ray 12d ago
aosp21321-hxy.glb Publish 0.1.0 · Ray 12d ago
aosp21321-hxy.kicad_mod Publish 0.1.0 · Ray 12d ago
aosp21321-hxy.kicad_sym Publish 0.1.0 · Ray 12d ago
aosp21321-hxy.lbr Publish 0.1.0 · Ray 12d ago
aosp21321-hxy.step Publish 0.1.0 · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago

AOSP21321-HXY

HXY MOSFET · MOSFETs · SOP-8

AOSP21321-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (VDS rated -30V, ID -11A).
2 S passive Source of the P-channel MOSFET (VDS rated -30V, ID -11A).
3 S passive Source of the P-channel MOSFET (VDS rated -30V, ID -11A).
4 G input Gate of the P-channel MOSFET, with VGS maximum of ±20V and a threshold of -1.0V to -2.5V.
5 D passive Drain of the P-channel MOSFET (pulsed drain current -40A).
6 D passive Drain of the P-channel MOSFET (pulsed drain current -40A).
7 D passive Drain of the P-channel MOSFET (pulsed drain current -40A).
8 D passive Drain of the P-channel MOSFET (pulsed drain current -40A).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID -11 A TA=25°C, VGS @ 10V 1
Pulsed Drain Current IDM -40 A 1
Total Power Dissipation PD 3.7 W TA=25°C 1
Storage Temperature Range TSTG -55 150 °C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 33.8 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 13 16 mΩ VGS= -10V, ID= -10A 2
Static Drain-Source on-Resistance RDS(on) 18 27 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -11 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -15A 2
Input Capacitance Ciss 1330 pF VDS= -15V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 183 pF VDS= -15V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 156 pF VDS= -15V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 22 nC VDS= -15V, ID= -5A, VGS= -10V 2
Gate-Source Charge Qgs 1 nC VDS= -15V, ID= -5A, VGS= -10V 2
Gate-Drain (Miller) Charge Qgd 1.8 nC VDS= -15V, ID= -5A, VGS= -10V 2
Turn-on Delay Time td(on) 9 ns VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω 2
Turn-on Rise Time tr 13 ns VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω 2
Turn-off Delay Time td(off) 48 ns VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω 2
Turn-off Fall Time tf 20 ns VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω 2
Reverse Recovery Time trr 64 ns TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs 2
Reverse Recovery Charge Qrr 25 nC TJ=25℃, VDD= -24V, IF=-2.8A, dI/dt=-100A/μs 2

CAD (KiCad official)

  • Symbol: AOSP21321-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: aosp21321-hxy-etched.step / aosp21321-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aosp21321-hxy.step / aosp21321-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 cccf97b5d3a7ecf3, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF