# AON6884

**Alpha & Omega Semicon** · MOSFETs · DFN-8(5x6)

AON6884 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (dual N-channel, VDS 40V, RDS(ON) <11.3mΩ at VGS=10V). |
| 2 | G1 | input | Gate of MOSFET 1, maximum gate-source voltage ±20V. |
| 3 | S2 | passive | Source of MOSFET 2 (dual N-channel, VDS 40V, RDS(ON) <11.3mΩ at VGS=10V). |
| 4 | G2 | input | Gate of MOSFET 2, maximum gate-source voltage ±20V. |
| 5 | D2 | passive | Drain of MOSFET 2, drain-source voltage 40V maximum (shorted with pin 6). |
| 6 | D2 | passive | Drain of MOSFET 2, drain-source voltage 40V maximum (shorted with pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, drain-source voltage 40V maximum (shorted with pin 8). |
| 8 | D1 | passive | Drain of MOSFET 1, drain-source voltage 40V maximum (shorted with pin 7). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 34 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 21 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 120 | A |  | 1 |
| Continuous Drain Current | IDSM |  |  | 9 | A | TA=25°C | 1 |
| Continuous Drain Current | IDSM |  |  | 7 | A | TA=70°C | 1 |
| Avalanche Current | IAS, IAR |  |  | 35 | A |  | 1 |
| Avalanche energy | EAS, EAR |  |  | 61 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 21 | W | TC=25°C | 1 |
| Power Dissipation | PD |  |  | 8 | W | TC=100°C | 1 |
| Power Dissipation | PDSM |  |  | 1.6 | W | TA=25°C | 1 |
| Power Dissipation | PDSM |  |  | 1 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 35 | 45 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 65 | 80 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Case | RθJC |  | 5 | 6 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=40V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS=40V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.55 | 2.1 | 2.7 | V | VDS=VGS ID=250µA | 2 |
| On state drain current | ID(ON) | 120 |  |  | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 9.4 | 11.3 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 14 | 17 | mΩ | VGS=10V, ID=10A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 13.8 | mΩ | VGS=4.5V, ID=10A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 25 | A |  | 2 |
| Input Capacitance | Ciss | 1200 | 1500 | 1950 | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Output Capacitance | Coss | 150 | 215 | 280 | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 80 | 135 | 190 | pF | VGS=0V, VDS=20V, f=1MHz | 2 |
| Gate resistance | Rg | 1.7 | 3.5 | 5.3 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 22 | 27.2 | 33 | nC | VGS=10V, VDS=20V, ID=10A | 2 |
| Total Gate Charge (4.5V) | Qg | 10 | 13.6 | 16 | nC | VGS=10V, VDS=20V, ID=10A | 2 |
| Gate Source Charge | Qgs | 3.6 | 4.5 | 5.4 | nC | VGS=10V, VDS=20V, ID=10A | 2 |
| Gate Drain Charge | Qgd | 3.8 | 6.4 | 9 | nC | VGS=10V, VDS=20V, ID=10A | 2 |
| Body Diode Reverse Recovery Time | trr | 9 | 13 | 17 | ns | IF=10A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 25 | 35 | 45 | nC | IF=10A, dI/dt=500A/µs | 2 |
| Forward Transconductance | gFS |  | 50 |  | S | VDS=5V, ID=10A | 2 |
| Turn-On DelayTime | tD(on) |  | 6.4 |  | ns | VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 17.2 |  | ns | VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 29.6 |  | ns | VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 16.8 |  | ns | VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | silver | Lead Frame Bare Cu Die Attach Ag Epoxy | 11 |

## CAD (KiCad official)

- Symbol: `AON6884`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `aon6884-etched.step` / `aon6884-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6884.step` / `aon6884.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aon6884-datasheet.pdf) (12 pp, sha256 `a240e88efd29cca1`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aon6884-datasheet.pdf)