component

AON6884

Public Made by Adom

by adom

Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsaon6884factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

AON6884

Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)

AON6884 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (dual N-channel, VDS 40V, RDS(ON) <11.3mΩ at VGS=10V).
2 G1 input Gate of MOSFET 1, maximum gate-source voltage ±20V.
3 S2 passive Source of MOSFET 2 (dual N-channel, VDS 40V, RDS(ON) <11.3mΩ at VGS=10V).
4 G2 input Gate of MOSFET 2, maximum gate-source voltage ±20V.
5 D2 passive Drain of MOSFET 2, drain-source voltage 40V maximum (shorted with pin 6).
6 D2 passive Drain of MOSFET 2, drain-source voltage 40V maximum (shorted with pin 5).
7 D1 passive Drain of MOSFET 1, drain-source voltage 40V maximum (shorted with pin 8).
8 D1 passive Drain of MOSFET 1, drain-source voltage 40V maximum (shorted with pin 7).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package DFN-8(5x6)
Category Transistors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 34 A TC=25°C 1
Continuous Drain Current ID 21 A TC=100°C 1
Pulsed Drain Current IDM 120 A 1
Continuous Drain Current IDSM 9 A TA=25°C 1
Continuous Drain Current IDSM 7 A TA=70°C 1
Avalanche Current IAS, IAR 35 A 1
Avalanche energy EAS, EAR 61 mJ L=0.1mH 1
Power Dissipation PD 21 W TC=25°C 1
Power Dissipation PD 8 W TC=100°C 1
Power Dissipation PDSM 1.6 W TA=25°C 1
Power Dissipation PDSM 1 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 35 45 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 65 80 °C/W Steady-State 1
Maximum Junction-to-Case RθJC 5 6 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 40 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=40V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=40V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1.55 2.1 2.7 V VDS=VGS ID=250µA 2
On state drain current ID(ON) 120 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 9.4 11.3 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 14 17 mΩ VGS=10V, ID=10A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 11 13.8 mΩ VGS=4.5V, ID=10A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 25 A 2
Input Capacitance Ciss 1200 1500 1950 pF VGS=0V, VDS=20V, f=1MHz 2
Output Capacitance Coss 150 215 280 pF VGS=0V, VDS=20V, f=1MHz 2
Reverse Transfer Capacitance Crss 80 135 190 pF VGS=0V, VDS=20V, f=1MHz 2
Gate resistance Rg 1.7 3.5 5.3 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 22 27.2 33 nC VGS=10V, VDS=20V, ID=10A 2
Total Gate Charge (4.5V) Qg 10 13.6 16 nC VGS=10V, VDS=20V, ID=10A 2
Gate Source Charge Qgs 3.6 4.5 5.4 nC VGS=10V, VDS=20V, ID=10A 2
Gate Drain Charge Qgd 3.8 6.4 9 nC VGS=10V, VDS=20V, ID=10A 2
Body Diode Reverse Recovery Time trr 9 13 17 ns IF=10A, dI/dt=500A/µs 2
Body Diode Reverse Recovery Charge Qrr 25 35 45 nC IF=10A, dI/dt=500A/µs 2
Forward Transconductance gFS 50 S VDS=5V, ID=10A 2
Turn-On DelayTime tD(on) 6.4 ns VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω 2
Turn-On Rise Time tr 17.2 ns VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 29.6 ns VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 16.8 ns VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts silver Lead Frame Bare Cu Die Attach Ag Epoxy 11

CAD (KiCad official)

  • Symbol: AON6884
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aon6884-etched.step / aon6884-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6884.step / aon6884.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (12 pp, sha256 a240e88efd29cca1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF