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AON6560

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Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AON6560

Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)

AON6560 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin, connected to the MOSFET source; drain-source voltage rated 30V.
2 S passive Source pin, connected to the MOSFET source; drain-source voltage rated 30V.
3 S passive Source pin, connected to the MOSFET source; drain-source voltage rated 30V.
4 G input Gate pin; gate-source voltage is rated at ±20V maximum.
5 D passive Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited).
6 D passive Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited).
7 D passive Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited).
8 D passive Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.4 1.8 2.2 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 0.55 0.68 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 0.8 1 mΩ VGS=10V, ID=20A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 0.85 1.1 mΩ VGS=4.5V, ID=20A 2
Diode Forward Voltage VSD 0.65 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 200 A 2
Total Gate Charge (10V) Qg 230 325 nC VGS=10V, VDS=15V, ID=20A 2
Total Gate Charge (4.5V) Qg 130 185 nC VGS=4.5V, VDS=15V, ID=20A 2
Drain-Source Voltage VDS 30 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V TA=25°C 1
Continuous Drain Current ID 200 A TC=25°C 1
Pulsed Drain Current IDM 800 A TC=25°C 1
Continuous Drain Current IDSM 80 A TA=25°C 1
Continuous Drain Current IDSM 67 A TA=70°C 1
Avalanche Current IAS 84 A 1
Avalanche energy EAS 160 mJ L=0.05mH 1
Power Dissipation B PD 208 W TC=25°C 1
Power Dissipation B PD 83 W TC=100°C 1
Power Dissipation A PDSM 7.3 W TA=25°C 1
Power Dissipation A PDSM 4.7 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 14 17 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 40 50 °C/W Steady-State 1
Maximum Junction-to-Case RθJC 0.46 0.6 °C/W Steady-State 1
Forward Transconductance gFS 100 S VDS=5V, ID=20A 2
Input Capacitance Ciss 11500 pF VGS=0V, VDS=15V, f=1MHz 2
Output Capacitance Coss 3400 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 3100 pF VGS=0V, VDS=15V, f=1MHz 2
Gate resistance Rg 1.2 Ω f=1MHz 2
Gate Source Charge Qgs 28 nC VGS=10V, VDS=15V, ID=20A 2
Gate Drain Charge Qgd 92 nC VGS=10V, VDS=15V, ID=20A 2
Turn-On DelayTime tD(on) 16 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Turn-On Rise Time tr 42 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 115.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 91.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 38.5 ns IF=20A, dI/dt=500A/µs 2
Body Diode Reverse Recovery Charge Qrr 120 nC IF=20A, dI/dt=500A/µs 2

CAD (KiCad official)

  • Symbol: AON6560
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aon6560-etched.step / aon6560-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6560.step / aon6560.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256 c4a843961b162614, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF