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AON6560
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6560
Alpha & Omega Semicon · MOSFETs · DFN-8(5x6)
AON6560 from Alpha & Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source pin, connected to the MOSFET source; drain-source voltage rated 30V. |
| 2 | S | passive | Source pin, connected to the MOSFET source; drain-source voltage rated 30V. |
| 3 | S | passive | Source pin, connected to the MOSFET source; drain-source voltage rated 30V. |
| 4 | G | input | Gate pin; gate-source voltage is rated at ±20V maximum. |
| 5 | D | passive | Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited). |
| 6 | D | passive | Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited). |
| 7 | D | passive | Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited). |
| 8 | D | passive | Drain pin, connected to the MOSFET drain; continuous drain current is 200A at TC=25°C (package limited). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.8 | 2.2 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.55 | 0.68 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.8 | 1 | mΩ | VGS=10V, ID=20A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.85 | 1.1 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.65 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 200 | A | 2 | |||
| Total Gate Charge (10V) | Qg | 230 | 325 | nC | VGS=10V, VDS=15V, ID=20A | 2 | |
| Total Gate Charge (4.5V) | Qg | 130 | 185 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Continuous Drain Current | ID | 200 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 800 | A | TC=25°C | 1 | ||
| Continuous Drain Current | IDSM | 80 | A | TA=25°C | 1 | ||
| Continuous Drain Current | IDSM | 67 | A | TA=70°C | 1 | ||
| Avalanche Current | IAS | 84 | A | 1 | |||
| Avalanche energy | EAS | 160 | mJ | L=0.05mH | 1 | ||
| Power Dissipation B | PD | 208 | W | TC=25°C | 1 | ||
| Power Dissipation B | PD | 83 | W | TC=100°C | 1 | ||
| Power Dissipation A | PDSM | 7.3 | W | TA=25°C | 1 | ||
| Power Dissipation A | PDSM | 4.7 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 14 | 17 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 40 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case | RθJC | 0.46 | 0.6 | °C/W | Steady-State | 1 | |
| Forward Transconductance | gFS | 100 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 11500 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 3400 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 3100 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Gate resistance | Rg | 1.2 | Ω | f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 28 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Gate Drain Charge | Qgd | 92 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Turn-On DelayTime | tD(on) | 16 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 42 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 115.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 91.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 38.5 | ns | IF=20A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 120 | nC | IF=20A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
AON6560 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6560-etched.step/aon6560-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6560.step/aon6560.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
c4a843961b162614, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).