component
AON6508-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AON6508-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
AON6508-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2 | 2.4 | mΩ | VGS=10V , ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | 3.2 | mΩ | VGS=4.5V , ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS , ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 150 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | 150 | A | TC=25℃ | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | 80 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 180 | mJ | 1 | |||
| Avalanche Current | IAS | 60 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 187 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.1 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 |
CAD (KiCad official)
- Symbol:
AON6508-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
aon6508-hxy-etched.step/aon6508-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6508-hxy.step/aon6508-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
9560ddbf02e0fae3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AON6508-HXY
**HXY MOSFET** · MOSFETs · DFN5x6-8L
AON6508-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2 | 2.4 | mΩ | VGS=10V , ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.5 | 3.2 | mΩ | VGS=4.5V , ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VGS=VDS , ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS | | | 150 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | | | 150 | A | TC=25℃ | 1 |
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | | | 80 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 160 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 180 | mJ | | 1 |
| Avalanche Current | IAS | | | 60 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 187 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | 62 | | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC | | 1.1 | | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 |
## CAD (KiCad official)
- Symbol: `AON6508-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `aon6508-hxy-etched.step` / `aon6508-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6508-hxy.step` / `aon6508-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590911469074927616) (6 pp, sha256 `9560ddbf02e0fae3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aon6508-hxy-datasheet.pdf)