component

AON6508-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaon6508-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers aon6508-hxy: viewers · Ray 7d ago
aon6508-hxy-etched.glb Publish 0.1.0 · Ray 7d ago
aon6508-hxy-etched.step aon6508-hxy: factory component page (tier=lcsc) · Ray 7d ago
aon6508-hxy-hero.glb aon6508-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
aon6508-hxy-hero.overlay.json Publish 0.1.0 · Ray 7d ago
aon6508-hxy.glb Publish 0.1.0 · Ray 7d ago
aon6508-hxy.kicad_mod Publish 0.1.0 · Ray 7d ago
aon6508-hxy.kicad_sym Publish 0.1.0 · Ray 7d ago
aon6508-hxy.lbr Publish 0.1.0 · Ray 7d ago
aon6508-hxy.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

AON6508-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

AON6508-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings.
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings.
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit for this lead beyond the absolute maximum ratings.
4 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS).
5 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS).
6 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS).
7 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS).
8 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V (VDS).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2 2.4 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 2.5 3.2 mΩ VGS=4.5V , ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS , ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 150 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID@TC=25℃ 150 A TC=25℃ 1
Continuous Drain Current, VGS @ 10V ID@TC=100℃ 80 A TC=100℃ 1
Pulsed Drain Current IDM 160 A 1
Single Pulse Avalanche Energy EAS 180 mJ 1
Avalanche Current IAS 60 A 1
Total Power Dissipation PD@TC=25℃ 187 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 1.1 ℃/W Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1

CAD (KiCad official)

  • Symbol: AON6508-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: aon6508-hxy-etched.step / aon6508-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6508-hxy.step / aon6508-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 9560ddbf02e0fae3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF