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AON6360-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AON6360-HXY

HXY MOSFET · MOSFETs · DFN5X6-8L

AON6360-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pin 1, marked by the Pin 1 arrow); one of three source pins tied together, VDS rating 30V.
2 S passive Source terminal, tied to the other source pins; body diode forward current ISD tested at 20A.
3 S passive Source terminal, tied to the other source pins; gate-source voltage limit is ±20V relative to it.
4 G input Gate input; VGS absolute maximum ±20V, threshold 1.4V min to 2.5V max, drive down to 4.5V.
5 D passive Drain terminal, one of four drain pins tied together; continuous drain current 90A at TC=25°C.
6 D passive Drain terminal, tied to the other drain pins; VDS maximum 30V.
7 D passive Drain terminal, tied to the other drain pins; pulsed drain current 384A.
8 D passive Drain terminal, tied to the other drain pins and the exposed drain pad; RDS(ON) below 3.0mΩ at VGS=10V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID 90 A TC=25℃ 1
Continuous Drain Current, VGS @ 10V ID 75 A TC=100℃ 1
Total Power Dissipation PD 2.42 W PD@TC=25℃ (second PD line, footnote 6) 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250mA 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 mA TJ=85°C 2
Gate Threshold Voltage VGS(th) 1.4 1.7 2.5 V VDS=VGS, IDS=250mA 2
Gate Leakage Current IGSS 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 3 3.8 mW VGS=10V, IDS=20A 2
Drain-Source On-state Resistance RDS(ON) 4 5.5 mW VGS=4.5V, IDS=15A 2
Diode Forward Voltage VSD 0.8 1.1 V ISD=20A, VGS=0V 2
Gate Resistance RG 1 2 W VGS=0V,VDS=0V,F=1MHz 2
Input Capacitance Ciss 2485 2971 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 12.4 23 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-on Rise Time tr 9.5 18 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Delay Time td(OFF) 27.2 49 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Fall Time tf 35.2 64 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Total Gate Charge Qg 20.6 28.8 nC VDS=15V, VGS=10V, IDS=20A 2
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W 1

CAD (KiCad official)

  • Symbol: AON6360-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: aon6360-hxy-etched.step / aon6360-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6360-hxy.step / aon6360-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 e2ce302d23d87783, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF