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AON6360-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6360-HXY
HXY MOSFET · MOSFETs · DFN5X6-8L
AON6360-HXY from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (pin 1, marked by the Pin 1 arrow); one of three source pins tied together, VDS rating 30V. |
| 2 | S | passive | Source terminal, tied to the other source pins; body diode forward current ISD tested at 20A. |
| 3 | S | passive | Source terminal, tied to the other source pins; gate-source voltage limit is ±20V relative to it. |
| 4 | G | input | Gate input; VGS absolute maximum ±20V, threshold 1.4V min to 2.5V max, drive down to 4.5V. |
| 5 | D | passive | Drain terminal, one of four drain pins tied together; continuous drain current 90A at TC=25°C. |
| 6 | D | passive | Drain terminal, tied to the other drain pins; VDS maximum 30V. |
| 7 | D | passive | Drain terminal, tied to the other drain pins; pulsed drain current 384A. |
| 8 | D | passive | Drain terminal, tied to the other drain pins and the exposed drain pad; RDS(ON) below 3.0mΩ at VGS=10V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 90 | A | TC=25℃ | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 75 | A | TC=100℃ | 1 | ||
| Total Power Dissipation | PD | 2.42 | W | PD@TC=25℃ (second PD line, footnote 6) | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, IDS=250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VDS=24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | mA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.7 | 2.5 | V | VDS=VGS, IDS=250mA | 2 |
| Gate Leakage Current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 2 | ||
| Drain-Source On-state Resistance | RDS(ON) | 3 | 3.8 | mW | VGS=10V, IDS=20A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 4 | 5.5 | mW | VGS=4.5V, IDS=15A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.1 | V | ISD=20A, VGS=0V | 2 | |
| Gate Resistance | RG | 1 | 2 | W | VGS=0V,VDS=0V,F=1MHz | 2 | |
| Input Capacitance | Ciss | 2485 | 2971 | pF | VGS=0V, VDS=15V, Frequency=1.0MHz | 2 | |
| Turn-on Delay Time | td(ON) | 12.4 | 23 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Turn-on Rise Time | tr | 9.5 | 18 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Turn-off Delay Time | td(OFF) | 27.2 | 49 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Turn-off Fall Time | tf | 35.2 | 64 | ns | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | 2 | |
| Total Gate Charge | Qg | 20.6 | 28.8 | nC | VDS=15V, VGS=10V, IDS=20A | 2 | |
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 25 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.4 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AON6360-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
aon6360-hxy-etched.step/aon6360-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6360-hxy.step/aon6360-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
e2ce302d23d87783, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).