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AON6324
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, DFN-8(5.6x5.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AON6324
Alpha Omega Semicon · MOSFETs · DFN-8(5.6x5.2)
AON6324 from Alpha Omega Semicon, in a DFN-8(5.6x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max. |
| 4 | G | input | Gate of the N-channel MOSFET, rated at ±12V VGS max, with a 1.1V to 2.0V gate threshold (VGS(th)). |
| 5 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 6 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 7 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 8 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5.6x5.2) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.5 | 2 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | 5 | µA | VDS=30V, VGS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ=55°C (VDS=30V, VGS=0V) | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.3 | 2.8 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.4 | 4.1 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | 3.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) | 29 | 45 | nC | VGS=10V, VDS=15V, ID=20A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 13 | 20 | nC | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.68 | 1 | V | IS=1A, VGS=0V | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 85 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 190 | A | 1 | |||
| Avalanche energy | EAS | 25 | mJ | L=0.01mH | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 15 | °C/W | t ≤ 10s | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 40 | °C/W | Steady-State | 1 | ||
| Maximum Junction-to-Case | RθJC | 3.8 | °C/W | Steady-State | 4 |
CAD (KiCad official)
- Symbol:
AON6324 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5.6x5.2) (KiCad packages3D, STEP)
- 3D model files:
aon6324-etched.step/aon6324-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6324.step/aon6324.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (10 pp, sha256
9f66ed4f3dda55b6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AON6324
**Alpha Omega Semicon** · MOSFETs · DFN-8(5.6x5.2)
AON6324 from Alpha Omega Semicon, in a DFN-8(5.6x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max. |
| 4 | G | input | Gate of the N-channel MOSFET, rated at ±12V VGS max, with a 1.1V to 2.0V gate threshold (VGS(th)). |
| 5 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 6 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 7 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 8 | D | passive | Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5.6x5.2) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.5 | 2 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | 1 | 5 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | TJ=55°C (VDS=30V, VGS=0V) | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.3 | 2.8 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.4 | 4.1 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.8 | 3.5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Gate resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) | | 29 | 45 | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Total Gate Charge (4.5V) | Qg (4.5V) | | 13 | 20 | nC | | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 40 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.68 | 1 | V | IS=1A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 85 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM | | | 190 | A | | 1 |
| Avalanche energy | EAS | | | 25 | mJ | L=0.01mH | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | | 15 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA | | | 40 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Case | RθJC | | | 3.8 | °C/W | Steady-State | 4 |
## CAD (KiCad official)
- Symbol: `AON6324`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5.6x5.2) (KiCad packages3D, STEP)
- 3D model files: `aon6324-etched.step` / `aon6324-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aon6324.step` / `aon6324.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588906375044321280) (10 pp, sha256 `9f66ed4f3dda55b6`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aon6324-datasheet.pdf)