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AON6324

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Alpha Omega Semicon MOSFETs, DFN-8(5.6x5.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AON6324

Alpha Omega Semicon · MOSFETs · DFN-8(5.6x5.2)

AON6324 from Alpha Omega Semicon, in a DFN-8(5.6x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max.
2 S passive Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max.
3 S passive Source of the N-channel MOSFET; pins 1-3 are source, and VDS is rated 30V max.
4 G input Gate of the N-channel MOSFET, rated at ±12V VGS max, with a 1.1V to 2.0V gate threshold (VGS(th)).
5 D passive Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited).
6 D passive Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited).
7 D passive Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited).
8 D passive Drain of the N-channel MOSFET; pins 5-8 are drain, with continuous ID of 85A at TC=25°C (package limited).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package DFN-8(5.6x5.2)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Gate Threshold Voltage VGS(th) 1.1 1.5 2 V VDS=VGS, ID=250µA 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Zero Gate Voltage Drain Current IDSS 1 5 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA TJ=55°C (VDS=30V, VGS=0V) 2
Static Drain-Source On-Resistance RDS(ON) 2.3 2.8 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 3.4 4.1 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 2.8 3.5 mΩ VGS=4.5V, ID=20A 2
Gate resistance Rg 0.9 1.8 2.7 Ω f=1MHz 2
Total Gate Charge (10V) Qg (10V) 29 45 nC VGS=10V, VDS=15V, ID=20A 2
Total Gate Charge (4.5V) Qg (4.5V) 13 20 nC 2
Maximum Body-Diode Continuous Current IS 40 A 2
Diode Forward Voltage VSD 0.68 1 V IS=1A, VGS=0V 2
Drain-Source Voltage VDS 30 V TA=25°C unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 85 A TC=25°C 1
Pulsed Drain Current IDM 190 A 1
Avalanche energy EAS 25 mJ L=0.01mH 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 15 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 40 °C/W Steady-State 1
Maximum Junction-to-Case RθJC 3.8 °C/W Steady-State 4

CAD (KiCad official)

  • Symbol: AON6324
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5.6x5.2) (KiCad packages3D, STEP)
  • 3D model files: aon6324-etched.step / aon6324-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6324.step / aon6324.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (10 pp, sha256 9f66ed4f3dda55b6, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF