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AON6220

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 22d ago
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aon6220-etched.step aon6220: factory component page (tier=lcsc) · Ray 22d ago
aon6220-hero.glb aon6220: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
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aon6220.step Publish 0.1.0 · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json aon6220: specified limits as data (metadata.characteristics, 38 rows from the datasheet) · Ray 17d ago
README.md aon6220: specified limits as data (metadata.characteristics, 38 rows from the datasheet) · Ray 17d ago

AON6220

Alpha Omega Semicon · MOSFETs · DFN-8(5x6)

AON6220 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; pins 1-3 are tied together, and the body diode continuous current (IS) is rated 48A max.
2 S passive Source of the N-channel MOSFET; pins 1-3 are tied together, and the body diode continuous current (IS) is rated 48A max.
3 S passive Source of the N-channel MOSFET; pins 1-3 are tied together, and the body diode continuous current (IS) is rated 48A max.
4 G input Gate of the N-channel MOSFET, with absolute maximum VGS of ±20V and a threshold of 1.3V min to 2.3V max.
5 D passive Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package.
6 D passive Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package.
7 D passive Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package.
8 D passive Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V ID 250μA, VGS 0V 2
Gate-Body Leakage Current IGSS 100 nA VDS 0V, VGS 20V 2
Gate Threshold Voltage VGS(th) 1.3 1.75 2.3 V VDS = VGS, ID 250μA 2
Static Drain-Source On-Resistance RDS(ON) 5.1 6.2 mΩ VGS 10V, ID 20A, TJ 25C 2
Static Drain-Source On-Resistance RDS(ON) 9.3 11.3 mΩ VGS 10V, ID 20A, TJ 125C 2
Static Drain-Source On-Resistance RDS(ON) 5.9 7.4 mΩ VGS 4.5V, ID 20A 2
Diode Forward Voltage VSD 0.68 1 V IS 1A, VGS 0V 2
Maximum Body-Diode Continuous Current IS 48 A 2
Gate Resistance Rg 0.5 1.1 1.8 Ω f 1MHz 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS 100V, VGS 0V 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS 100V, VGS 0V, TJ 55C (as printed) 2
Total Gate Charge Qg(10V) 65 95 nC VGS 10V, VDS 50V, ID 20A 2
Total Gate Charge Qg(4.5V) 30 45 nC VGS 4.5V, ID 20A 2
Forward Transconductance gFS 100 S VDS 5V, ID 20A 2
Gate Source Charge Qgs 10 nC VGS 10V, VDS 50V, ID 20A 2
Gate Drain Charge Qgd 9 nC VGS 10V, VDS 50V, ID 20A 2
Input Capacitance Ciss 4525 pF VGS 0V, VDS 50V, f 1MHz 2
Output Capacitance Coss 345 pF VGS 0V, VDS 50V, f 1MHz 2
Reverse Transfer Capacitance Crss 22.5 pF VGS 0V, VDS 50V, f 1MHz 2
Turn-On Delay Time tD(on) 10 ns VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω 2
Turn-On Rise Time tr 6 ns VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω 2
Turn-Off Delay Time tD(off) 51 ns VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω 2
Turn-Off Fall Time tf 9 ns VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω 2
Body Diode Reverse Recovery Time trr 32 ns IF 20A, di/dt 500A/μs 2
Body Diode Reverse Recovery Charge Qrr 162 nC IF 20A, di/dt 500A/μs 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID 48 A TC 25C 1
Pulsed Drain Current IDM 185 A 1
Avalanche Energy EAS 97 mJ L 0.1mH 1
VDS Spike VSPIKE 120 V 1
Power Dissipation (steady-state, TA 25C) PDSM 6.2 W TA 25C 1
Power Dissipation (steady-state, TA 70C) PDSM 4 W TA 70C 1
Power Dissipation PD 45.5 W TC 100C 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 15 20 °C/W t 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 40 50 °C/W Steady-State 1
Maximum Junction-to-Case (Steady-State) RθJC 0.8 1.1 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AON6220
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: aon6220-etched.step / aon6220-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aon6220.step / aon6220.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 c69388b316ffce22, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF