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AON6220
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6220
Alpha Omega Semicon · MOSFETs · DFN-8(5x6)
AON6220 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are tied together, and the body diode continuous current (IS) is rated 48A max. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are tied together, and the body diode continuous current (IS) is rated 48A max. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are tied together, and the body diode continuous current (IS) is rated 48A max. |
| 4 | G | input | Gate of the N-channel MOSFET, with absolute maximum VGS of ±20V and a threshold of 1.3V min to 2.3V max. |
| 5 | D | passive | Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package. |
| 6 | D | passive | Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package. |
| 7 | D | passive | Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package. |
| 8 | D | passive | Drain of the MOSFET; pins 5-8 are tied together, with a maximum VDS of 100V and continuous current limited to 48A by the package. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID 250μA, VGS 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VDS 0V, VGS 20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.75 | 2.3 | V | VDS = VGS, ID 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 5.1 | 6.2 | mΩ | VGS 10V, ID 20A, TJ 25C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.3 | 11.3 | mΩ | VGS 10V, ID 20A, TJ 125C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.9 | 7.4 | mΩ | VGS 4.5V, ID 20A | 2 | |
| Diode Forward Voltage | VSD | 0.68 | 1 | V | IS 1A, VGS 0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 48 | A | 2 | |||
| Gate Resistance | Rg | 0.5 | 1.1 | 1.8 | Ω | f 1MHz | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS 100V, VGS 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS 100V, VGS 0V, TJ 55C (as printed) | 2 | ||
| Total Gate Charge | Qg(10V) | 65 | 95 | nC | VGS 10V, VDS 50V, ID 20A | 2 | |
| Total Gate Charge | Qg(4.5V) | 30 | 45 | nC | VGS 4.5V, ID 20A | 2 | |
| Forward Transconductance | gFS | 100 | S | VDS 5V, ID 20A | 2 | ||
| Gate Source Charge | Qgs | 10 | nC | VGS 10V, VDS 50V, ID 20A | 2 | ||
| Gate Drain Charge | Qgd | 9 | nC | VGS 10V, VDS 50V, ID 20A | 2 | ||
| Input Capacitance | Ciss | 4525 | pF | VGS 0V, VDS 50V, f 1MHz | 2 | ||
| Output Capacitance | Coss | 345 | pF | VGS 0V, VDS 50V, f 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 22.5 | pF | VGS 0V, VDS 50V, f 1MHz | 2 | ||
| Turn-On Delay Time | tD(on) | 10 | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 | ||
| Turn-On Rise Time | tr | 6 | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 51 | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 | ||
| Turn-Off Fall Time | tf | 9 | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 32 | ns | IF 20A, di/dt 500A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 162 | nC | IF 20A, di/dt 500A/μs | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 48 | A | TC 25C | 1 | ||
| Pulsed Drain Current | IDM | 185 | A | 1 | |||
| Avalanche Energy | EAS | 97 | mJ | L 0.1mH | 1 | ||
| VDS Spike | VSPIKE | 120 | V | 1 | |||
| Power Dissipation (steady-state, TA 25C) | PDSM | 6.2 | W | TA 25C | 1 | ||
| Power Dissipation (steady-state, TA 70C) | PDSM | 4 | W | TA 70C | 1 | ||
| Power Dissipation | PD | 45.5 | W | TC 100C | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 15 | 20 | °C/W | t 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 40 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case (Steady-State) | RθJC | 0.8 | 1.1 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AON6220 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6220-etched.step/aon6220-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6220.step/aon6220.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
c69388b316ffce22, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).