component
AON6220
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
aon6220: specified limits as data (metadata.characteristics, 38 rows from the datasheet)
2 files changed
+509−1
README.md+45@@ -27,6 +27,51 @@ AON6220 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions e | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID 250μA, VGS 0V | 2 |+| Gate-Body Leakage Current | IGSS | | | 100 | nA | VDS 0V, VGS 20V | 2 |+| Gate Threshold Voltage | VGS(th) | 1.3 | 1.75 | 2.3 | V | VDS = VGS, ID 250μA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 5.1 | 6.2 | mΩ | VGS 10V, ID 20A, TJ 25C | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 9.3 | 11.3 | mΩ | VGS 10V, ID 20A, TJ 125C | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 5.9 | 7.4 | mΩ | VGS 4.5V, ID 20A | 2 |+| Diode Forward Voltage | VSD | | 0.68 | 1 | V | IS 1A, VGS 0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 48 | A | | 2 |+| Gate Resistance | Rg | 0.5 | 1.1 | 1.8 | Ω | f 1MHz | 2 |+| Zero Gate Voltage Drain Current | IDSS | | 1 | | μA | VDS 100V, VGS 0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VDS 100V, VGS 0V, TJ 55C (as printed) | 2 |+| Total Gate Charge | Qg(10V) | | 65 | 95 | nC | VGS 10V, VDS 50V, ID 20A | 2 |+| Total Gate Charge | Qg(4.5V) | | 30 | 45 | nC | VGS 4.5V, ID 20A | 2 |+| Forward Transconductance | gFS | | 100 | | S | VDS 5V, ID 20A | 2 |+| Gate Source Charge | Qgs | | 10 | | nC | VGS 10V, VDS 50V, ID 20A | 2 |+| Gate Drain Charge | Qgd | | 9 | | nC | VGS 10V, VDS 50V, ID 20A | 2 |+| Input Capacitance | Ciss | | 4525 | | pF | VGS 0V, VDS 50V, f 1MHz | 2 |+| Output Capacitance | Coss | | 345 | | pF | VGS 0V, VDS 50V, f 1MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 22.5 | | pF | VGS 0V, VDS 50V, f 1MHz | 2 |+| Turn-On Delay Time | tD(on) | | 10 | | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 |+| Turn-On Rise Time | tr | | 6 | | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 |+| Turn-Off Delay Time | tD(off) | | 51 | | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 |+| Turn-Off Fall Time | tf | | 9 | | ns | VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω | 2 |+| Body Diode Reverse Recovery Time | trr | | 32 | | ns | IF 20A, di/dt 500A/μs | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 162 | | nC | IF 20A, di/dt 500A/μs | 2 |+| Drain-Source Voltage | VDS | | | 100 | V | | 1 |+| Gate-Source Voltage | VGS | | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 48 | A | TC 25C | 1 |+| Pulsed Drain Current | IDM | | | 185 | A | | 1 |+| Avalanche Energy | EAS | | | 97 | mJ | L 0.1mH | 1 |+| VDS Spike | VSPIKE | | | 120 | V | | 1 |+| Power Dissipation (steady-state, TA 25C) | PDSM | | | 6.2 | W | TA 25C | 1 |+| Power Dissipation (steady-state, TA 70C) | PDSM | | | 4 | W | TA 70C | 1 |+| Power Dissipation | PD | | | 45.5 | W | TC 100C | 1 |+| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 15 | 20 | °C/W | t 10s | 1 |+| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 40 | 50 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Case (Steady-State) | RθJC | | 0.8 | 1.1 | °C/W | Steady-State | 1 |+ ## CAD (KiCad official) - Symbol: `AON6220`
page.json+464−1@@ -187,6 +187,469 @@ "Package": "DFN-8(5x6)", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c69388b316ffce22",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "ID 250μA, VGS 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS 0V, VGS 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.3,+ "typ": 1.75,+ "max": 2.3,+ "conditions": "VDS = VGS, ID 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5.1,+ "max": 6.2,+ "conditions": "VGS 10V, ID 20A, TJ 25C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 9.3,+ "max": 11.3,+ "conditions": "VGS 10V, ID 20A, TJ 125C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5.9,+ "max": 7.4,+ "conditions": "VGS 4.5V, ID 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.68,+ "max": 1,+ "conditions": "IS 1A, VGS 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 48,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.5,+ "typ": 1.1,+ "max": 1.8,+ "conditions": "f 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "VDS 100V, VGS 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS 100V, VGS 0V, TJ 55C (as printed)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg(10V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 65,+ "max": 95,+ "conditions": "VGS 10V, VDS 50V, ID 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg(4.5V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 30,+ "max": 45,+ "conditions": "VGS 4.5V, ID 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 100,+ "max": null,+ "conditions": "VDS 5V, ID 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VGS 10V, VDS 50V, ID 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VGS 10V, VDS 50V, ID 20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4525,+ "max": null,+ "conditions": "VGS 0V, VDS 50V, f 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 345,+ "max": null,+ "conditions": "VGS 0V, VDS 50V, f 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 22.5,+ "max": null,+ "conditions": "VGS 0V, VDS 50V, f 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "tD(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "tD(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 51,+ "max": null,+ "conditions": "VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": null,+ "conditions": "VGS 10V, VDS 50V, RL 2.5Ω, RGEN 3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 32,+ "max": null,+ "conditions": "IF 20A, di/dt 500A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 162,+ "max": null,+ "conditions": "IF 20A, di/dt 500A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 48,+ "conditions": "TC 25C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 185,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 97,+ "conditions": "L 0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "VDS Spike",+ "symbol": "VSPIKE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (steady-state, TA 25C)",+ "symbol": "PDSM",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 6.2,+ "conditions": "TA 25C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (steady-state, TA 70C)",+ "symbol": "PDSM",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "TA 70C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 45.5,+ "conditions": "TC 100C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (t ≤ 10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 15,+ "max": 20,+ "conditions": "t 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (Steady-State)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case (Steady-State)",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.8,+ "max": 1.1,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -228,4 +691,4 @@ "visibility": { "public": true }-}+}