main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers aod9n50-vb: viewers · Ray 4d ago
aod9n50-vb-etched.glb Publish 0.1.0 · Ray 4d ago
aod9n50-vb-etched.step aod9n50-vb: factory component page (tier=lcsc) · Ray 4d ago
aod9n50-vb-hero.glb aod9n50-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
aod9n50-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
aod9n50-vb.glb Publish 0.1.0 · Ray 4d ago
aod9n50-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
aod9n50-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
aod9n50-vb.lbr Publish 0.1.0 · Ray 4d ago
aod9n50-vb.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 4d ago

AOD9N50-VB

VBsemi Elec · MOSFETs · TO-252

AOD9N50-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±30 V (VGS absolute maximum).
2 D passive Drain terminal, also the thermal tab (RthJC is specified to the drain); drain-source voltage is rated 650 V.
3 S passive Source terminal; reference for gate-source voltage and return path for drain current.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage (N) VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Gate-Source Leakage IGSS -1 1 μA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Diode Forward Voltage VSD 1.5 V TJ = 25 °C, IS = 4 A, VGS = 0 V 2
Maximum Junction-to-Ambient RthJA 63 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 0.6 °C/W 2

CAD (KiCad official)

  • Symbol: AOD9N50-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod9n50-vb-etched.step / aod9n50-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod9n50-vb.step / aod9n50-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 67360e399edc6b7b, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF