component
AOD8N25
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AOD8N25
Alpha & Omega Semicon · MOSFETs · TO-252
AOD8N25 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; maximum gate-source voltage is ±30 V, with RDS(ON) specified at VGS=10 V. |
| 2 | D | passive | Drain (also connected to the tab); maximum drain-source voltage is 250 V with 8 A continuous current at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current is 8 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 250 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TA=25°C | 1 | |
| Continuous Drain Current | ID | 8 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 5 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Avalanche Current | IAS | 2.1 | A | 1 | |||
| Single pulsed avalanche energy | EAS | 132 | mJ | L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 78 | W | TC=25°C | 1 | ||
| Power Dissipation Derate | PD | 0.63 | W/°C | Derate above 25°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -50 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 55 | °C/W | Note A,G | 1 | ||
| Maximum Case-to-sink | RθCS | 0.5 | °C/W | Note A | 1 | ||
| Maximum Junction-to-Case | RθJC | 1.6 | °C/W | Note D,F | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 300 | V | ID=250µA, VGS=0V, TJ=150°C | 2 | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/ΔTJ | 0.25 | V/°C | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=250V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS=200V, TJ=125°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3.1 | 3.7 | 4.3 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.46 | 0.56 | Ω | VGS=10V, ID=1.5A | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=40V, ID=1.5A | 2 | ||
| Diode Forward Voltage | VSD | 0.77 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 8 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | 2 | |||
| Gate resistance | Rg | 1.7 | 3.4 | 5.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 6 | 7.2 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 | |
| Input Capacitance | Ciss | 306 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 51 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 3.2 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 2 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 | ||
| Gate Drain Charge | Qgd | 1.5 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 | ||
| Turn-On Delay Time | tD(on) | 14 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Turn-On Rise Time | tr | 12 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 23 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Turn-Off Fall Time | tf | 12 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 77 | ns | IF=1.5A, dI/dt=100A/µs, VDS=100V | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 0.29 | µC | IF=1.5A, dI/dt=100A/µs, VDS=100V | 2 |
CAD (KiCad official)
- Symbol:
AOD8N25 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod8n25-etched.step/aod8n25-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod8n25.step/aod8n25.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
ac0d9dce2e867708, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD8N25
**Alpha & Omega Semicon** · MOSFETs · TO-252
AOD8N25 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; maximum gate-source voltage is ±30 V, with RDS(ON) specified at VGS=10 V. |
| 2 | D | passive | Drain (also connected to the tab); maximum drain-source voltage is 250 V with 8 A continuous current at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current is 8 A maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 250 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 8 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 5 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM | | | 16 | A | | 1 |
| Avalanche Current | IAS | | | 2.1 | A | | 1 |
| Single pulsed avalanche energy | EAS | | | 132 | mJ | L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | | 1 |
| Power Dissipation | PD | | | 78 | W | TC=25°C | 1 |
| Power Dissipation Derate | PD | | | 0.63 | W/°C | Derate above 25°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -50 | | 150 | °C | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Maximum Junction-to-Ambient | RθJA | | | 55 | °C/W | Note A,G | 1 |
| Maximum Case-to-sink | RθCS | | 0.5 | | °C/W | Note A | 1 |
| Maximum Junction-to-Case | RθJC | | | 1.6 | °C/W | Note D,F | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 250 | | | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 300 | | | V | ID=250µA, VGS=0V, TJ=150°C | 2 |
| Breakdown Voltage Temperature Coefficient | BVDSS/ΔTJ | | 0.25 | | V/°C | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=250V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS=200V, TJ=125°C | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±30V | 2 |
| Gate Threshold Voltage | VGS(th) | 3.1 | 3.7 | 4.3 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.46 | 0.56 | Ω | VGS=10V, ID=1.5A | 2 |
| Forward Transconductance | gFS | | 5 | | S | VDS=40V, ID=1.5A | 2 |
| Diode Forward Voltage | VSD | | 0.77 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 8 | A | | 2 |
| Maximum Body-Diode Pulsed Current | ISM | | | 16 | A | | 2 |
| Gate resistance | Rg | 1.7 | 3.4 | 5.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 6 | 7.2 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 |
| Input Capacitance | Ciss | | 306 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | | 51 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 3.2 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate Source Charge | Qgs | | 2 | | nC | VGS=10V, VDS=200V, ID=1.5A | 2 |
| Gate Drain Charge | Qgd | | 1.5 | | nC | VGS=10V, VDS=200V, ID=1.5A | 2 |
| Turn-On Delay Time | tD(on) | | 14 | | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 |
| Turn-On Rise Time | tr | | 12 | | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 |
| Turn-Off Delay Time | tD(off) | | 23 | | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 |
| Turn-Off Fall Time | tf | | 12 | | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 77 | | ns | IF=1.5A, dI/dt=100A/µs, VDS=100V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 0.29 | | µC | IF=1.5A, dI/dt=100A/µs, VDS=100V | 2 |
## CAD (KiCad official)
- Symbol: `AOD8N25`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod8n25-etched.step` / `aod8n25-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod8n25.step` / `aod8n25.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/aod8n25-datasheet.pdf) (6 pp, sha256 `ac0d9dce2e867708`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod8n25-datasheet.pdf)