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AOD8N25

Alpha & Omega Semicon · MOSFETs · TO-252

AOD8N25 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; maximum gate-source voltage is ±30 V, with RDS(ON) specified at VGS=10 V.
2 D passive Drain (also connected to the tab); maximum drain-source voltage is 250 V with 8 A continuous current at TC=25°C.
3 S passive Source; body-diode continuous current is 8 A maximum.

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 250 V TA=25°C 1
Gate-Source Voltage VGS -30 30 V TA=25°C 1
Continuous Drain Current ID 8 A TC=25°C 1
Continuous Drain Current ID 5 A TC=100°C 1
Pulsed Drain Current IDM 16 A 1
Avalanche Current IAS 2.1 A 1
Single pulsed avalanche energy EAS 132 mJ L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C 1
Peak diode recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation PD 78 W TC=25°C 1
Power Dissipation Derate PD 0.63 W/°C Derate above 25°C 1
Junction and Storage Temperature Range TJ, TSTG -50 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1/8" from case for 5 seconds 1
Maximum Junction-to-Ambient RθJA 55 °C/W Note A,G 1
Maximum Case-to-sink RθCS 0.5 °C/W Note A 1
Maximum Junction-to-Case RθJC 1.6 °C/W Note D,F 1
Drain-Source Breakdown Voltage BVDSS 250 V ID=250µA, VGS=0V, TJ=25°C 2
Drain-Source Breakdown Voltage BVDSS 300 V ID=250µA, VGS=0V, TJ=150°C 2
Breakdown Voltage Temperature Coefficient BVDSS/ΔTJ 0.25 V/°C ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=250V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS=200V, TJ=125°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±30V 2
Gate Threshold Voltage VGS(th) 3.1 3.7 4.3 V VDS=5V, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 0.46 0.56 Ω VGS=10V, ID=1.5A 2
Forward Transconductance gFS 5 S VDS=40V, ID=1.5A 2
Diode Forward Voltage VSD 0.77 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 8 A 2
Maximum Body-Diode Pulsed Current ISM 16 A 2
Gate resistance Rg 1.7 3.4 5.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 6 7.2 nC VGS=10V, VDS=200V, ID=1.5A 2
Input Capacitance Ciss 306 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 51 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 3.2 pF VGS=0V, VDS=25V, f=1MHz 2
Gate Source Charge Qgs 2 nC VGS=10V, VDS=200V, ID=1.5A 2
Gate Drain Charge Qgd 1.5 nC VGS=10V, VDS=200V, ID=1.5A 2
Turn-On Delay Time tD(on) 14 ns VGS=10V, VDS=125V, ID=1.5A, RG=25Ω 2
Turn-On Rise Time tr 12 ns VGS=10V, VDS=125V, ID=1.5A, RG=25Ω 2
Turn-Off Delay Time tD(off) 23 ns VGS=10V, VDS=125V, ID=1.5A, RG=25Ω 2
Turn-Off Fall Time tf 12 ns VGS=10V, VDS=125V, ID=1.5A, RG=25Ω 2
Body Diode Reverse Recovery Time trr 77 ns IF=1.5A, dI/dt=100A/µs, VDS=100V 2
Body Diode Reverse Recovery Charge Qrr 0.29 µC IF=1.5A, dI/dt=100A/µs, VDS=100V 2

CAD (KiCad official)

  • Symbol: AOD8N25
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod8n25-etched.step / aod8n25-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod8n25.step / aod8n25.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256 ac0d9dce2e867708, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF