component
AOD8N25
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| aod8n25-etched.glb | 12d ago |
| aod8n25-etched.step | 12d ago |
| aod8n25-hero.glb | 12d ago |
| aod8n25-hero.overlay.json | 12d ago |
| aod8n25.glb | 12d ago |
| aod8n25.kicad_mod | 12d ago |
| aod8n25.kicad_sym | 12d ago |
| aod8n25.lbr | 12d ago |
| aod8n25.step | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
AOD8N25
Alpha & Omega Semicon · MOSFETs · TO-252
AOD8N25 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; maximum gate-source voltage is ±30 V, with RDS(ON) specified at VGS=10 V. |
| 2 | D | passive | Drain (also connected to the tab); maximum drain-source voltage is 250 V with 8 A continuous current at TC=25°C. |
| 3 | S | passive | Source; body-diode continuous current is 8 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 250 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TA=25°C | 1 | |
| Continuous Drain Current | ID | 8 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 5 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Avalanche Current | IAS | 2.1 | A | 1 | |||
| Single pulsed avalanche energy | EAS | 132 | mJ | L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 78 | W | TC=25°C | 1 | ||
| Power Dissipation Derate | PD | 0.63 | W/°C | Derate above 25°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -50 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 55 | °C/W | Note A,G | 1 | ||
| Maximum Case-to-sink | RθCS | 0.5 | °C/W | Note A | 1 | ||
| Maximum Junction-to-Case | RθJC | 1.6 | °C/W | Note D,F | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 300 | V | ID=250µA, VGS=0V, TJ=150°C | 2 | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/ΔTJ | 0.25 | V/°C | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=250V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS=200V, TJ=125°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3.1 | 3.7 | 4.3 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.46 | 0.56 | Ω | VGS=10V, ID=1.5A | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=40V, ID=1.5A | 2 | ||
| Diode Forward Voltage | VSD | 0.77 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 8 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | 2 | |||
| Gate resistance | Rg | 1.7 | 3.4 | 5.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 6 | 7.2 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 | |
| Input Capacitance | Ciss | 306 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 51 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 3.2 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 2 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 | ||
| Gate Drain Charge | Qgd | 1.5 | nC | VGS=10V, VDS=200V, ID=1.5A | 2 | ||
| Turn-On Delay Time | tD(on) | 14 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Turn-On Rise Time | tr | 12 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 23 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Turn-Off Fall Time | tf | 12 | ns | VGS=10V, VDS=125V, ID=1.5A, RG=25Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 77 | ns | IF=1.5A, dI/dt=100A/µs, VDS=100V | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 0.29 | µC | IF=1.5A, dI/dt=100A/µs, VDS=100V | 2 |
CAD (KiCad official)
- Symbol:
AOD8N25 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod8n25-etched.step/aod8n25-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod8n25.step/aod8n25.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
ac0d9dce2e867708, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).