component
AOD609-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
AOD609-MS
MSKSEMI · MOSFETs · TO-252-4
AOD609-MS from MSKSEMI, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 30A rated, VGS ±20V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20V max, threshold 1.0 to 2.5V, suited to 4.5V drive). |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -20A rated, VGS ±20V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS ±20V max, threshold -1.0 to -2.5V, suited to 4.5V drive). |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, tied together as D1/D2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-4 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-CH) | VDS | 40 | V | 2 | |||
| Drain-Source Voltage (P-CH) | VDS | -40 | V | 2 | |||
| Gate-Source Voltage (N-CH) | VGS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage (P-CH) | VGS | -20 | 20 | V | 2 | ||
| Drain Current Continuous (N-CH) | ID | 30 | A | TC=25℃ | 2 | ||
| Drain Current Continuous (P-CH) | ID | -20 | A | TC=25℃ | 2 | ||
| Drain Current Continuous (N-CH) | ID | 28 | A | TC=100℃ | 2 | ||
| Drain Current Continuous (P-CH) | ID | -19 | A | TC=100℃ | 2 | ||
| Drain Current Pulsed (N-CH) | IDM | 50 | A | Repetitive rating, pulse width limited by max junction temperature (Note 1) | 2 | ||
| Drain Current Pulsed (P-CH) | IDM | -48 | A | Repetitive rating, pulse width limited by max junction temperature (Note 1) | 2 | ||
| Power Dissipation | PD | 30 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 30 | ℃/W | 2 | |||
| Thermal Resistance Junction to Ambient | RθJA | 62 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage (N-CH) | BVDSS | 40 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-Source Leakage Current at 25℃ (N-CH) | IDSS | 1 | uA | VDS=40V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current at 125℃ (N-CH) | IDSS | 10 | uA | VDS=32V, VGS=0V, TJ=125℃ | 3 | ||
| Gate-Source Leakage Current (N-CH) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Static Drain-Source On-Resistance (N-CH) | RDS(ON) | 19 | 30 | mΩ | VGS=10V, ID=6A | 3 | |
| Static Drain-Source On-Resistance (N-CH) | RDS(ON) | 28 | 40 | mΩ | VGS=4.5V, ID=4A | 3 | |
| Gate Threshold Voltage (N-CH) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current (N-CH) | IS | 15 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current (N-CH) | ISM | 30 | A | 3 | |||
| Diode Forward Voltage (N-CH) | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 | ||
| Drain-Source Breakdown Voltage (P-CH) | BVDSS | -40 | V | VGS=0V, ID=-250uA | 5 | ||
| Drain-Source Leakage Current at 25℃ (P-CH) | IDSS | -1 | uA | VDS=-40V, VGS=0V, TJ=25℃ | 5 | ||
| Drain-Source Leakage Current at 125℃ (P-CH) | IDSS | -10 | uA | VDS=-32V, VGS=0V, TJ=125℃ | 5 | ||
| Gate-Source Leakage Current (P-CH) | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 5 | |
| Static Drain-Source On-Resistance (P-CH) | RDS(ON) | 38 | 45 | mΩ | VGS=-10V, ID=-5A | 5 | |
| Static Drain-Source On-Resistance (P-CH) | RDS(ON) | 45 | 70 | mΩ | VGS=-4.5V, ID=-3A | 5 | |
| Gate Threshold Voltage (P-CH) | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 5 |
| Continuous Source Current (P-CH) | IS | -12 | A | VG=VD=0V, Force Current | 5 | ||
| Pulsed Source Current (P-CH) | ISM | -24 | A | 5 | |||
| Diode Forward Voltage (P-CH) | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 5 | ||
| Gate Threshold Voltage Temperature Coefficient (N-CH) | ΔVGS(th) | -3 | mV/℃ | 3 | |||
| BVDSS Temperature Coefficient (N-CH) | ΔBVDSS/ΔTJ | 0.04 | V/℃ | Reference to 25℃, ID=1mA | 3 | ||
| Forward Transconductance (N-CH) | gfs | 6.5 | S | VDS=10V, ID=3A | 3 | ||
| Total Gate Charge (N-CH) | Qg | 5.2 | nC | VDS=20V, VGS=4.5V, ID=6A | 3 | ||
| Gate-Source Charge (N-CH) | Qgs | 1.2 | nC | 3 | |||
| Gate-Drain Charge (N-CH) | Qgd | 2.5 | nC | 3 | |||
| Turn-On Delay Time (N-CH) | Td(on) | 3.2 | ns | VDD=20V, VGS=4.5V, RG=25Ω, ID=1A | 3 | ||
| Rise Time (N-CH) | Tr | 8.6 | ns | 3 | |||
| Turn-Off Delay Time (N-CH) | Td(off) | 18 | ns | 3 | |||
| Fall Time (N-CH) | Tf | 6 | ns | 3 | |||
| Input Capacitance (N-CH) | Ciss | 420 | pF | VDS=15V, VGS=0V, F=1MHz | 3 | ||
| Output Capacitance (N-CH) | Coss | 65 | pF | 3 | |||
| Reverse Transfer Capacitance (N-CH) | Crss | 40 | pF | 3 | |||
| BVDSS Temperature Coefficient (P-CH) | ΔBVDSS/ΔTJ | -0.04 | V/℃ | Reference to 25℃, ID=-1mA | 5 | ||
| Gate Threshold Voltage Temperature Coefficient (P-CH) | ΔVGS(th) | 3 | mV/℃ | 5 | |||
| Forward Transconductance (P-CH) | gfs | 9 | S | VDS=-10V, ID=-3A | 5 | ||
| Total Gate Charge (P-CH) | Qg | 9 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 5 | ||
| Gate-Source Charge (P-CH) | Qgs | 2.5 | nC | 5 | |||
| Gate-Drain Charge (P-CH) | Qgd | 3.2 | nC | 5 | |||
| Turn-On Delay Time (P-CH) | Td(on) | 20 | ns | VDD=-20V, VGS=-4.5V, RG=25Ω, ID=-1A | 5 | ||
| Rise Time (P-CH) | Tr | 12 | ns | 5 | |||
| Turn-Off Delay Time (P-CH) | Td(off) | 46 | ns | 5 | |||
| Fall Time (P-CH) | Tf | 6 | ns | 5 | |||
| Input Capacitance (P-CH) | Ciss | 1050 | pF | VDS=-15V, VGS=0V, F=1MHz | 5 | ||
| Output Capacitance (P-CH) | Coss | 110 | pF | 5 |
CAD (KiCad official)
- Symbol:
AOD609-MS - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
aod609-ms-etched.step/aod609-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod609-ms.step/aod609-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
5e2daa8eec6721c9, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AOD609-MS
**MSKSEMI** · MOSFETs · TO-252-4
AOD609-MS from MSKSEMI, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 30A rated, VGS ±20V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20V max, threshold 1.0 to 2.5V, suited to 4.5V drive). |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, -20A rated, VGS ±20V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (VGS ±20V max, threshold -1.0 to -2.5V, suited to 4.5V drive). |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, tied together as D1/D2. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | TO-252-4 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-CH) | VDS | | | 40 | V | | 2 |
| Drain-Source Voltage (P-CH) | VDS | -40 | | | V | | 2 |
| Gate-Source Voltage (N-CH) | VGS | -20 | | 20 | V | | 2 |
| Gate-Source Voltage (P-CH) | VGS | -20 | | 20 | V | | 2 |
| Drain Current Continuous (N-CH) | ID | | | 30 | A | TC=25℃ | 2 |
| Drain Current Continuous (P-CH) | ID | -20 | | | A | TC=25℃ | 2 |
| Drain Current Continuous (N-CH) | ID | | | 28 | A | TC=100℃ | 2 |
| Drain Current Continuous (P-CH) | ID | -19 | | | A | TC=100℃ | 2 |
| Drain Current Pulsed (N-CH) | IDM | | | 50 | A | Repetitive rating, pulse width limited by max junction temperature (Note 1) | 2 |
| Drain Current Pulsed (P-CH) | IDM | -48 | | | A | Repetitive rating, pulse width limited by max junction temperature (Note 1) | 2 |
| Power Dissipation | PD | | | 30 | W | TC=25℃ | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction to Case | RθJC | | | 30 | ℃/W | | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 62 | ℃/W | | 2 |
| Drain-Source Breakdown Voltage (N-CH) | BVDSS | 40 | | | V | VGS=0V, ID=250uA | 3 |
| Drain-Source Leakage Current at 25℃ (N-CH) | IDSS | | | 1 | uA | VDS=40V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current at 125℃ (N-CH) | IDSS | | | 10 | uA | VDS=32V, VGS=0V, TJ=125℃ | 3 |
| Gate-Source Leakage Current (N-CH) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Static Drain-Source On-Resistance (N-CH) | RDS(ON) | | 19 | 30 | mΩ | VGS=10V, ID=6A | 3 |
| Static Drain-Source On-Resistance (N-CH) | RDS(ON) | | 28 | 40 | mΩ | VGS=4.5V, ID=4A | 3 |
| Gate Threshold Voltage (N-CH) | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Continuous Source Current (N-CH) | IS | | | 15 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current (N-CH) | ISM | | | 30 | A | | 3 |
| Diode Forward Voltage (N-CH) | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 3 |
| Drain-Source Breakdown Voltage (P-CH) | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 5 |
| Drain-Source Leakage Current at 25℃ (P-CH) | IDSS | | | -1 | uA | VDS=-40V, VGS=0V, TJ=25℃ | 5 |
| Drain-Source Leakage Current at 125℃ (P-CH) | IDSS | | | -10 | uA | VDS=-32V, VGS=0V, TJ=125℃ | 5 |
| Gate-Source Leakage Current (P-CH) | IGSS | -100 | | 100 | nA | VGS=±10V, VDS=0V | 5 |
| Static Drain-Source On-Resistance (P-CH) | RDS(ON) | | 38 | 45 | mΩ | VGS=-10V, ID=-5A | 5 |
| Static Drain-Source On-Resistance (P-CH) | RDS(ON) | | 45 | 70 | mΩ | VGS=-4.5V, ID=-3A | 5 |
| Gate Threshold Voltage (P-CH) | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 5 |
| Continuous Source Current (P-CH) | IS | | | -12 | A | VG=VD=0V, Force Current | 5 |
| Pulsed Source Current (P-CH) | ISM | | | -24 | A | | 5 |
| Diode Forward Voltage (P-CH) | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 5 |
| Gate Threshold Voltage Temperature Coefficient (N-CH) | ΔVGS(th) | | -3 | | mV/℃ | | 3 |
| BVDSS Temperature Coefficient (N-CH) | ΔBVDSS/ΔTJ | | 0.04 | | V/℃ | Reference to 25℃, ID=1mA | 3 |
| Forward Transconductance (N-CH) | gfs | | 6.5 | | S | VDS=10V, ID=3A | 3 |
| Total Gate Charge (N-CH) | Qg | | 5.2 | | nC | VDS=20V, VGS=4.5V, ID=6A | 3 |
| Gate-Source Charge (N-CH) | Qgs | | 1.2 | | nC | | 3 |
| Gate-Drain Charge (N-CH) | Qgd | | 2.5 | | nC | | 3 |
| Turn-On Delay Time (N-CH) | Td(on) | | 3.2 | | ns | VDD=20V, VGS=4.5V, RG=25Ω, ID=1A | 3 |
| Rise Time (N-CH) | Tr | | 8.6 | | ns | | 3 |
| Turn-Off Delay Time (N-CH) | Td(off) | | 18 | | ns | | 3 |
| Fall Time (N-CH) | Tf | | 6 | | ns | | 3 |
| Input Capacitance (N-CH) | Ciss | | 420 | | pF | VDS=15V, VGS=0V, F=1MHz | 3 |
| Output Capacitance (N-CH) | Coss | | 65 | | pF | | 3 |
| Reverse Transfer Capacitance (N-CH) | Crss | | 40 | | pF | | 3 |
| BVDSS Temperature Coefficient (P-CH) | ΔBVDSS/ΔTJ | | -0.04 | | V/℃ | Reference to 25℃, ID=-1mA | 5 |
| Gate Threshold Voltage Temperature Coefficient (P-CH) | ΔVGS(th) | | 3 | | mV/℃ | | 5 |
| Forward Transconductance (P-CH) | gfs | | 9 | | S | VDS=-10V, ID=-3A | 5 |
| Total Gate Charge (P-CH) | Qg | | 9 | | nC | VDS=-20V, VGS=-4.5V, ID=-5A | 5 |
| Gate-Source Charge (P-CH) | Qgs | | 2.5 | | nC | | 5 |
| Gate-Drain Charge (P-CH) | Qgd | | 3.2 | | nC | | 5 |
| Turn-On Delay Time (P-CH) | Td(on) | | 20 | | ns | VDD=-20V, VGS=-4.5V, RG=25Ω, ID=-1A | 5 |
| Rise Time (P-CH) | Tr | | 12 | | ns | | 5 |
| Turn-Off Delay Time (P-CH) | Td(off) | | 46 | | ns | | 5 |
| Fall Time (P-CH) | Tf | | 6 | | ns | | 5 |
| Input Capacitance (P-CH) | Ciss | | 1050 | | pF | VDS=-15V, VGS=0V, F=1MHz | 5 |
| Output Capacitance (P-CH) | Coss | | 110 | | pF | | 5 |
## CAD (KiCad official)
- Symbol: `AOD609-MS`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `aod609-ms-etched.step` / `aod609-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod609-ms.step` / `aod609-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](docs/aod609-ms-datasheet.pdf) (8 pp, sha256 `5e2daa8eec6721c9`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/aod609-ms-datasheet.pdf)