component

AOD609-MS

Public Made by Adom

by adom

MSKSEMI MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoraod609-msfactory-2.0.0extractor-text

Verified AOD609-MS

by Ray · last 4 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 5 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AOD609-MS · TO-252-4 · 5 pins
  • ✓copper: 5 copper pads, none touching another net
  • ✓datasheet: all 5 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-4
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ojb5o3l1/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 5 pins = 5 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 5 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ aod609-ms.kicad_sym✓ aod609-ms.kicad_mod✓ aod609-ms.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 1d ago
viewers aod609-ms: viewers · Ray 1d ago
aod609-ms-etched.glb Publish 0.1.0 · Ray 1d ago
aod609-ms-etched.step aod609-ms: factory component page (tier=lcsc) · Ray 1d ago
aod609-ms-hero.glb aod609-ms: hero GLB from the etched model (keeps the MPN mark) · Ray 1d ago
aod609-ms-hero.overlay.json Publish 0.1.0 · Ray 1d ago
aod609-ms.glb Publish 0.1.0 · Ray 1d ago
aod609-ms.kicad_mod Publish 0.1.0 · Ray 1d ago
aod609-ms.kicad_sym Publish 0.1.0 · Ray 1d ago
aod609-ms.lbr Publish 0.1.0 · Ray 1d ago
aod609-ms.step Publish 0.1.0 · Ray 1d ago
package.json Publish 0.1.0 · Ray 1d ago
page.json Set visibility: public · Ray 1d ago
README.md Publish 0.1.0 · Ray 1d ago
verification.json Verified: Published by the parts factory: tier lcsc, 5 pins · Ray 1d ago

AOD609-MS

MSKSEMI · MOSFETs · TO-252-4

AOD609-MS from MSKSEMI, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (40V, 30A rated, VGS ±20V).
2 G1 input Gate of the N-channel MOSFET (VGS ±20V max, threshold 1.0 to 2.5V, suited to 4.5V drive).
3 S2 passive Source of the P-channel MOSFET (-40V, -20A rated, VGS ±20V).
4 G2 input Gate of the P-channel MOSFET (VGS ±20V max, threshold -1.0 to -2.5V, suited to 4.5V drive).
5 D1/D2 passive Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, tied together as D1/D2.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package TO-252-4
Category Triode/MOS Tube/Transistor
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-CH) VDS 40 V 2
Drain-Source Voltage (P-CH) VDS -40 V 2
Gate-Source Voltage (N-CH) VGS -20 20 V 2
Gate-Source Voltage (P-CH) VGS -20 20 V 2
Drain Current Continuous (N-CH) ID 30 A TC=25℃ 2
Drain Current Continuous (P-CH) ID -20 A TC=25℃ 2
Drain Current Continuous (N-CH) ID 28 A TC=100℃ 2
Drain Current Continuous (P-CH) ID -19 A TC=100℃ 2
Drain Current Pulsed (N-CH) IDM 50 A Repetitive rating, pulse width limited by max junction temperature (Note 1) 2
Drain Current Pulsed (P-CH) IDM -48 A Repetitive rating, pulse width limited by max junction temperature (Note 1) 2
Power Dissipation PD 30 W TC=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction to Case RθJC 30 ℃/W 2
Thermal Resistance Junction to Ambient RθJA 62 ℃/W 2
Drain-Source Breakdown Voltage (N-CH) BVDSS 40 V VGS=0V, ID=250uA 3
Drain-Source Leakage Current at 25℃ (N-CH) IDSS 1 uA VDS=40V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current at 125℃ (N-CH) IDSS 10 uA VDS=32V, VGS=0V, TJ=125℃ 3
Gate-Source Leakage Current (N-CH) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Static Drain-Source On-Resistance (N-CH) RDS(ON) 19 30 mΩ VGS=10V, ID=6A 3
Static Drain-Source On-Resistance (N-CH) RDS(ON) 28 40 mΩ VGS=4.5V, ID=4A 3
Gate Threshold Voltage (N-CH) VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 3
Continuous Source Current (N-CH) IS 15 A VG=VD=0V, Force Current 3
Pulsed Source Current (N-CH) ISM 30 A 3
Diode Forward Voltage (N-CH) VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 3
Drain-Source Breakdown Voltage (P-CH) BVDSS -40 V VGS=0V, ID=-250uA 5
Drain-Source Leakage Current at 25℃ (P-CH) IDSS -1 uA VDS=-40V, VGS=0V, TJ=25℃ 5
Drain-Source Leakage Current at 125℃ (P-CH) IDSS -10 uA VDS=-32V, VGS=0V, TJ=125℃ 5
Gate-Source Leakage Current (P-CH) IGSS -100 100 nA VGS=±10V, VDS=0V 5
Static Drain-Source On-Resistance (P-CH) RDS(ON) 38 45 mΩ VGS=-10V, ID=-5A 5
Static Drain-Source On-Resistance (P-CH) RDS(ON) 45 70 mΩ VGS=-4.5V, ID=-3A 5
Gate Threshold Voltage (P-CH) VGS(th) -1 -1.5 -2.5 V VGS=VDS, ID=-250uA 5
Continuous Source Current (P-CH) IS -12 A VG=VD=0V, Force Current 5
Pulsed Source Current (P-CH) ISM -24 A 5
Diode Forward Voltage (P-CH) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 5
Gate Threshold Voltage Temperature Coefficient (N-CH) ΔVGS(th) -3 mV/℃ 3
BVDSS Temperature Coefficient (N-CH) ΔBVDSS/ΔTJ 0.04 V/℃ Reference to 25℃, ID=1mA 3
Forward Transconductance (N-CH) gfs 6.5 S VDS=10V, ID=3A 3
Total Gate Charge (N-CH) Qg 5.2 nC VDS=20V, VGS=4.5V, ID=6A 3
Gate-Source Charge (N-CH) Qgs 1.2 nC 3
Gate-Drain Charge (N-CH) Qgd 2.5 nC 3
Turn-On Delay Time (N-CH) Td(on) 3.2 ns VDD=20V, VGS=4.5V, RG=25Ω, ID=1A 3
Rise Time (N-CH) Tr 8.6 ns 3
Turn-Off Delay Time (N-CH) Td(off) 18 ns 3
Fall Time (N-CH) Tf 6 ns 3
Input Capacitance (N-CH) Ciss 420 pF VDS=15V, VGS=0V, F=1MHz 3
Output Capacitance (N-CH) Coss 65 pF 3
Reverse Transfer Capacitance (N-CH) Crss 40 pF 3
BVDSS Temperature Coefficient (P-CH) ΔBVDSS/ΔTJ -0.04 V/℃ Reference to 25℃, ID=-1mA 5
Gate Threshold Voltage Temperature Coefficient (P-CH) ΔVGS(th) 3 mV/℃ 5
Forward Transconductance (P-CH) gfs 9 S VDS=-10V, ID=-3A 5
Total Gate Charge (P-CH) Qg 9 nC VDS=-20V, VGS=-4.5V, ID=-5A 5
Gate-Source Charge (P-CH) Qgs 2.5 nC 5
Gate-Drain Charge (P-CH) Qgd 3.2 nC 5
Turn-On Delay Time (P-CH) Td(on) 20 ns VDD=-20V, VGS=-4.5V, RG=25Ω, ID=-1A 5
Rise Time (P-CH) Tr 12 ns 5
Turn-Off Delay Time (P-CH) Td(off) 46 ns 5
Fall Time (P-CH) Tf 6 ns 5
Input Capacitance (P-CH) Ciss 1050 pF VDS=-15V, VGS=0V, F=1MHz 5
Output Capacitance (P-CH) Coss 110 pF 5

CAD (KiCad official)

  • Symbol: AOD609-MS
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4 (KiCad packages3D, STEP)
  • 3D model files: aod609-ms-etched.step / aod609-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod609-ms.step / aod609-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (8 pp, sha256 5e2daa8eec6721c9, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF