component

AOD5B65MQ1E

Public Made by Adom

by adom

Alpha Omega Semicon IGBT Transistors / Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsaod5b65mq1efactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
aod5b65mq1e / README.md
History Download
Ray Publish 0.1.0 361c161 14d ago

AOD5B65MQ1E

Alpha Omega Semicon · IGBT Transistors / Modules · TO-252

AOD5B65MQ1E from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the IGBT, with maximum gate-emitter voltage of ±20 V.
2 C passive Collector (centre lead, connected to the exposed tab); collector-emitter voltage rated 650 V.
3 E passive Emitter; the anti-parallel diode anode connects here and the pin carries up to 10 A continuous collector current at TC=25°C.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCE 650 V 1
Gate-Emitter Voltage VGE -20 20 V 1
Pulsed Collector Current ICM 15 A Limited by TJmax 1
Turn-Off SOA Current ILM 15 A VCE≤650V, Limited by TJmax 1
Continuous Collector Current IC 10 A TC=25°C 1
Continuous Collector Current IC 5 A TC=100°C 1
Continuous Diode Forward Current IF 10 A TC=25°C 1
Continuous Diode Forward Current IF 5 A TC=100°C 1
Short Circuit Withstanding Time tSC 5 ms VGE=15V, VCC≤400V, TJ≤150°C 1
Power Dissipation PD 52 W TC=25°C 1
Power Dissipation PD 21 W TC=100°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Lead Temperature for Soldering TL 300 °C 1/8" from case for 5 seconds 1
Maximum Diode Junction-to-Case RθJC 6.8 °C/W Diode 1
Maximum IGBT Junction-to-Case RθJC 2.4 °C/W IGBT 1
Maximum Junction-to-Ambient RθJA 55 °C/W 1
Collector-Emitter Breakdown Voltage BVCES 650 V IC=1mA, VGE=0V, TJ=25°C 2
Collector-Emitter Saturation Voltage VCE(sat) 2.15 2.7 V VGE=15V, IC=5A, TJ=25°C 2
Gate-Emitter Threshold Voltage VGE(th) 4.2 5.1 5.6 V VCE=5V, IC=1mA 2
Zero Gate Voltage Collector Current ICES 10 mA VCE=650V, VGE=0V, TJ=25°C 2
Zero Gate Voltage Collector Current ICES 100 mA VCE=650V, VGE=0V, TJ=125°C 2
Zero Gate Voltage Collector Current ICES 500 mA VCE=650V, VGE=0V, TJ=150°C 2
Gate-Emitter Leakage Current IGES -10 10 mA VCE=0V, VGE=±20V 2
Diode Forward Voltage VF 2.06 2.6 V VGE=0V, IF=5A, TJ=25°C 2
Collector-Emitter Saturation Voltage VCE(sat) 2.74 V VGE=15V, IC=5A, TJ=125°C 2
Collector-Emitter Saturation Voltage VCE(sat) 2.89 V VGE=15V, IC=5A, TJ=150°C 2
Diode Forward Voltage VF 2.17 V VGE=0V, IF=5A, TJ=125°C 2
Diode Forward Voltage VF 2.13 V VGE=0V, IF=5A, TJ=150°C 2
Forward Transconductance gFS 2 S VCE=20V, IC=5A 2
Input Capacitance Cies 235 pF VGE=0V, VCC=25V, f=1MHz 2
Output Capacitance Coes 22 pF VGE=0V, VCC=25V, f=1MHz 2
Reverse Transfer Capacitance Cres 5 pF VGE=0V, VCC=25V, f=1MHz 2
Total Gate Charge Qg 8.8 nC VGE=15V, VCC=520V, IC=5A 2
Gate to Emitter Charge Qge 2.6 nC VGE=15V, VCC=520V, IC=5A 2
Gate to Collector Charge Qgc 3.4 nC VGE=15V, VCC=520V, IC=5A 2
Short Circuit Collector Current IC(SC) 20 A VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C 2
Gate Resistance Rg 20 W VGE=0V, VCC=0V, f=1MHz 2
Turn-On Delay Time tD(on) 7 ns TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-On Rise Time tr 13 ns TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-Off Delay Time tD(off) 78 ns TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-Off Fall Time tf 20 ns TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-On Energy Eon 0.09 mJ TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-Off Energy Eoff 0.06 mJ TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Total Switching Energy Etotal 0.15 mJ TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Diode Reverse Recovery Time trr 74 ns TJ=25°C, IF=5A, di/dt=200A/ms, VCC=400V 2
Diode Reverse Recovery Charge Qrr 0.11 mC TJ=25°C, IF=5A, di/dt=200A/ms, VCC=400V 2
Diode Peak Reverse Recovery Current Irm 2.46 A TJ=25°C, IF=5A, di/dt=200A/ms, VCC=400V 2
Turn-On Delay Time tD(on) 6.5 ns TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-On Rise Time tr 14 ns TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-Off Delay Time tD(off) 96 ns TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-Off Fall Time tf 34 ns TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-On Energy Eon 0.1 mJ TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Turn-Off Energy Eoff 0.1 mJ TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Total Switching Energy Etotal 0.2 mJ TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W 2
Diode Reverse Recovery Time trr 161 ns TJ=150°C, IF=5A, di/dt=200A/ms, VCC=400V 2
Diode Reverse Recovery Charge Qrr 0.21 mC TJ=150°C, IF=5A, di/dt=200A/ms, VCC=400V 2
Diode Peak Reverse Recovery Current Irm 2.83 A TJ=150°C, IF=5A, di/dt=200A/ms, VCC=400V 2

CAD (KiCad official)

  • Symbol: AOD5B65MQ1E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod5b65mq1e-etched.step / aod5b65mq1e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod5b65mq1e.step / aod5b65mq1e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (9 pp, sha256 11ed5c1672c7bee4, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF