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AOD5B65MQ1E
Public Made by Adomby adom
Alpha Omega Semicon IGBT Transistors / Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD5B65MQ1E
Alpha Omega Semicon · IGBT Transistors / Modules · TO-252
AOD5B65MQ1E from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the IGBT, with maximum gate-emitter voltage of ±20 V. |
| 2 | C | passive | Collector (centre lead, connected to the exposed tab); collector-emitter voltage rated 650 V. |
| 3 | E | passive | Emitter; the anti-parallel diode anode connects here and the pin carries up to 10 A continuous collector current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | 650 | V | 1 | |||
| Gate-Emitter Voltage | VGE | -20 | 20 | V | 1 | ||
| Pulsed Collector Current | ICM | 15 | A | Limited by TJmax | 1 | ||
| Turn-Off SOA Current | ILM | 15 | A | VCE≤650V, Limited by TJmax | 1 | ||
| Continuous Collector Current | IC | 10 | A | TC=25°C | 1 | ||
| Continuous Collector Current | IC | 5 | A | TC=100°C | 1 | ||
| Continuous Diode Forward Current | IF | 10 | A | TC=25°C | 1 | ||
| Continuous Diode Forward Current | IF | 5 | A | TC=100°C | 1 | ||
| Short Circuit Withstanding Time | tSC | 5 | ms | VGE=15V, VCC≤400V, TJ≤150°C | 1 | ||
| Power Dissipation | PD | 52 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 21 | W | TC=100°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Diode Junction-to-Case | RθJC | 6.8 | °C/W | Diode | 1 | ||
| Maximum IGBT Junction-to-Case | RθJC | 2.4 | °C/W | IGBT | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 55 | °C/W | 1 | |||
| Collector-Emitter Breakdown Voltage | BVCES | 650 | V | IC=1mA, VGE=0V, TJ=25°C | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.15 | 2.7 | V | VGE=15V, IC=5A, TJ=25°C | 2 | |
| Gate-Emitter Threshold Voltage | VGE(th) | 4.2 | 5.1 | 5.6 | V | VCE=5V, IC=1mA | 2 |
| Zero Gate Voltage Collector Current | ICES | 10 | mA | VCE=650V, VGE=0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Collector Current | ICES | 100 | mA | VCE=650V, VGE=0V, TJ=125°C | 2 | ||
| Zero Gate Voltage Collector Current | ICES | 500 | mA | VCE=650V, VGE=0V, TJ=150°C | 2 | ||
| Gate-Emitter Leakage Current | IGES | -10 | 10 | mA | VCE=0V, VGE=±20V | 2 | |
| Diode Forward Voltage | VF | 2.06 | 2.6 | V | VGE=0V, IF=5A, TJ=25°C | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.74 | V | VGE=15V, IC=5A, TJ=125°C | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.89 | V | VGE=15V, IC=5A, TJ=150°C | 2 | ||
| Diode Forward Voltage | VF | 2.17 | V | VGE=0V, IF=5A, TJ=125°C | 2 | ||
| Diode Forward Voltage | VF | 2.13 | V | VGE=0V, IF=5A, TJ=150°C | 2 | ||
| Forward Transconductance | gFS | 2 | S | VCE=20V, IC=5A | 2 | ||
| Input Capacitance | Cies | 235 | pF | VGE=0V, VCC=25V, f=1MHz | 2 | ||
| Output Capacitance | Coes | 22 | pF | VGE=0V, VCC=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Cres | 5 | pF | VGE=0V, VCC=25V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 8.8 | nC | VGE=15V, VCC=520V, IC=5A | 2 | ||
| Gate to Emitter Charge | Qge | 2.6 | nC | VGE=15V, VCC=520V, IC=5A | 2 | ||
| Gate to Collector Charge | Qgc | 3.4 | nC | VGE=15V, VCC=520V, IC=5A | 2 | ||
| Short Circuit Collector Current | IC(SC) | 20 | A | VGE=15V, VCC=400V, tsc≤5us, TJ≤150°C | 2 | ||
| Gate Resistance | Rg | 20 | W | VGE=0V, VCC=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | tD(on) | 7 | ns | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-On Rise Time | tr | 13 | ns | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-Off Delay Time | tD(off) | 78 | ns | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-Off Fall Time | tf | 20 | ns | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-On Energy | Eon | 0.09 | mJ | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-Off Energy | Eoff | 0.06 | mJ | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Total Switching Energy | Etotal | 0.15 | mJ | TJ=25°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Diode Reverse Recovery Time | trr | 74 | ns | TJ=25°C, IF=5A, di/dt=200A/ms, VCC=400V | 2 | ||
| Diode Reverse Recovery Charge | Qrr | 0.11 | mC | TJ=25°C, IF=5A, di/dt=200A/ms, VCC=400V | 2 | ||
| Diode Peak Reverse Recovery Current | Irm | 2.46 | A | TJ=25°C, IF=5A, di/dt=200A/ms, VCC=400V | 2 | ||
| Turn-On Delay Time | tD(on) | 6.5 | ns | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-On Rise Time | tr | 14 | ns | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-Off Delay Time | tD(off) | 96 | ns | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-Off Fall Time | tf | 34 | ns | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-On Energy | Eon | 0.1 | mJ | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Turn-Off Energy | Eoff | 0.1 | mJ | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Total Switching Energy | Etotal | 0.2 | mJ | TJ=150°C, VGE=15V, VCC=400V, IC=5A, RG=60W | 2 | ||
| Diode Reverse Recovery Time | trr | 161 | ns | TJ=150°C, IF=5A, di/dt=200A/ms, VCC=400V | 2 | ||
| Diode Reverse Recovery Charge | Qrr | 0.21 | mC | TJ=150°C, IF=5A, di/dt=200A/ms, VCC=400V | 2 | ||
| Diode Peak Reverse Recovery Current | Irm | 2.83 | A | TJ=150°C, IF=5A, di/dt=200A/ms, VCC=400V | 2 |
CAD (KiCad official)
- Symbol:
AOD5B65MQ1E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod5b65mq1e-etched.step/aod5b65mq1e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod5b65mq1e.step/aod5b65mq1e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (9 pp, sha256
11ed5c1672c7bee4, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).