# AOD444-VB

**VBsemi Elec** · MOSFETs · TO-252

AOD444-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET. Controls channel conduction between Drain and Source. VGS(th) = 1.0 V to 3.0 V; VGS absolute maximum = ± 20 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET. Electrically connected to the exposed metal tab of the TO-252 package. VDS max = 60 V; continuous ID = 18 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. Reference for VGS and VDS. Body diode anode is internally tied to Source (VSD = 0.8 V typ. at IF = 5.2 A). |
| 4 | D | passive | Drain tab (exposed thermal pad on TO-252). Electrically the Drain node - same net as pin 2. Serves as the primary thermal path (RthJC = 3 °C/W) and must be soldered to a copper pour for rated dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 4 |

## Ordering variants

Same part, different packaging or reel option.

- `AOD444-VB`

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 18 | A | TC = 25 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A | t = 300 µs | 1 |
| Avalanche Current | IAS |  |  | 15 | A |  | 1 |
| Single Avalanche Energy | EAS |  |  | 11.25 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 41.7 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.1 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA |  |  | 60 | °C/W | PCB mount, 1" square FR-4 PCB | 1 |
| Junction-to-Case (Drain) | RthJC |  |  | 3 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -250 |  | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | 20 |  |  | A | VDS ≥ 10 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.073 | Ω | VGS = 10 V, ID = 6.6 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.085 | Ω | VGS = 4.5 V, ID = 6 A | 2 |
| Gate Resistance | Rg | 0.4 | 2 | 4 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 19.8 | 30 | nC | VDS = 30 V, VGS = 10 V, ID = 6.6 A | 2 |
| Turn-On Delay Time | td(on) |  | 8 | 16 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 | 2 |
| Rise Time | tr |  | 11 | 20 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) |  | 18 | 27 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 | 2 |
| Fall Time | tf |  | 5 | 10 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-On Delay Time | td(on) |  | 38 | 57 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Rise Time | tr |  | 58 | 87 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Fall Time | tf |  | 8 | 16 | ns | VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Forward Voltage | VSD |  | 0.8 | 1.5 | V | IF = 5.2 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr |  | 34 | 51 | ns | IF = 5.2 A, dI/dt = 100 A/µs | 2 |
| Reverse Recovery Charge | Qrr |  | 50 | 75 | nC | IF = 5.2 A, dI/dt = 100 A/µs | 2 |

## CAD (KiCad official)

- Symbol: `AOD444-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod444-vb-etched.step` / `aod444-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod444-vb.step` / `aod444-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609096306619543552) (8 pp, sha256 `2ae704b0d25461f2`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aod444-vb-datasheet.pdf)