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AOD444-VB

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VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs aod444-vb: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
viewers aod444-vb: viewers · Ray 1mo ago
aod444-vb-etched.fit.json aod444-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
aod444-vb-etched.glb aod444-vb: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
aod444-vb-etched.step aod444-vb: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
aod444-vb.glb Publish 0.1.0 · Ray 1mo ago
aod444-vb.kicad_mod Publish 0.1.0 · Ray 1mo ago
aod444-vb.kicad_sym Publish 0.1.0 · Ray 1mo ago
aod444-vb.lbr Publish 0.1.0 · Ray 1mo ago
aod444-vb.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json aod444-vb: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md aod444-vb: specified limits as data (metadata.characteristics, 32 rows from the datasheet) · Ray 18d ago

AOD444-VB

VBsemi Elec · MOSFETs · TO-252

AOD444-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET. Controls channel conduction between Drain and Source. VGS(th) = 1.0 V to 3.0 V; VGS absolute maximum = ± 20 V.
2 D passive Drain terminal of the N-channel MOSFET. Electrically connected to the exposed metal tab of the TO-252 package. VDS max = 60 V; continuous ID = 18 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET. Reference for VGS and VDS. Body diode anode is internally tied to Source (VSD = 0.8 V typ. at IF = 5.2 A).
4 D passive Drain tab (exposed thermal pad on TO-252). Electrically the Drain node - same net as pin 2. Serves as the primary thermal path (RthJC = 3 °C/W) and must be soldered to a copper pour for rated dissipation.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • AOD444-VB

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 18 A TC = 25 °C 1
Pulsed Drain Current IDM 25 A t = 300 µs 1
Avalanche Current IAS 15 A 1
Single Avalanche Energy EAS 11.25 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 41.7 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 60 °C/W PCB mount, 1" square FR-4 PCB 1
Junction-to-Case (Drain) RthJC 3 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 10 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.073 Ω VGS = 10 V, ID = 6.6 A 2
Drain-Source On-State Resistance RDS(on) 0.085 Ω VGS = 4.5 V, ID = 6 A 2
Gate Resistance Rg 0.4 2 4 Ω f = 1 MHz 2
Total Gate Charge Qg 19.8 30 nC VDS = 30 V, VGS = 10 V, ID = 6.6 A 2
Turn-On Delay Time td(on) 8 16 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 2
Rise Time tr 11 20 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 18 27 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 5 10 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 10 V, Rg = 1 2
Turn-On Delay Time td(on) 38 57 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 2
Rise Time tr 58 87 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 2
Fall Time tf 8 16 ns VDD = 30 V, RL = 9.6, ID ≅ 5.2 A, VGEN = 4.5 V, Rg = 1 2
Forward Voltage VSD 0.8 1.5 V IF = 5.2 A, VGS = 0 V 2
Reverse Recovery Time trr 34 51 ns IF = 5.2 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 50 75 nC IF = 5.2 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: AOD444-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod444-vb-etched.step / aod444-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod444-vb.step / aod444-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 2ae704b0d25461f2, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF