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AOD4144-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoraod4144-hxyfactory-2.0.0extractor-text

Verified AOD4144-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AOD4144-HXY · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-dahlrlzr/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ aod4144-hxy.kicad_sym✓ aod4144-hxy.kicad_mod✓ aod4144-hxy.step
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Ray Publish 0.1.0 d291b08 1d ago

AOD4144-HXY

HXY MOSFET · MOSFETs · TO-252-2L

AOD4144-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated ±20 V (VGS) and gate threshold voltage of 1.2 V to 2.5 V.
2 D passive Drain terminal of the N-channel MOSFET, with drain-source breakdown voltage rated 30 V (VDS) and continuous drain current of 60 A at TC=25℃.
3 S passive Source terminal of the N-channel MOSFET, serving as the reference for the VGS and VDS ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 60 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 40 A TC=100℃, VGS @ 10V 1
Continuous Drain Current ID 13.6 A TA=25℃, VGS @ 10V 1
Continuous Drain Current ID 11.4 A TA=70℃, VGS @ 10V 1
Pulsed Drain Current IDM 110 A 1
Single Pulse Avalanche Energy EAS 57.8 mJ 1
Avalanche Current IAS 34 A 1
Total Power Dissipation PD 41 W TC=25℃ 1
Total Power Dissipation PD 2.42 W TA=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7 9 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 11 14 Ω VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.2 3.5 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 12.6 17.6 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 4.2 5.9 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Drain Charge Qgd 5.1 7.1 nC VDS=15V, VGS=4.5V, ID=15A 2
Turn-On Delay Time Td(on) 4.6 9.2 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Rise Time Tr 12.2 22 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Turn-Off Delay Time Td(off) 26.6 53 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Fall Time Tf 8 16 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Input Capacitance Ciss 1317 1843 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 163 228 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 131 183 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 55 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 110 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AOD4144-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: aod4144-hxy-etched.step / aod4144-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod4144-hxy.step / aod4144-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d036fd7f57f8d3ab, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF