component
AOD4144-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| aod4144-hxy-etched.glb | 1d ago |
| aod4144-hxy-etched.step | 1d ago |
| aod4144-hxy-hero.glb | 1d ago |
| aod4144-hxy-hero.overlay.json | 1d ago |
| aod4144-hxy.glb | 1d ago |
| aod4144-hxy.kicad_mod | 1d ago |
| aod4144-hxy.kicad_sym | 1d ago |
| aod4144-hxy.lbr | 1d ago |
| aod4144-hxy.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
| verification.json | 1d ago |
AOD4144-HXY
HXY MOSFET · MOSFETs · TO-252-2L
AOD4144-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated ±20 V (VGS) and gate threshold voltage of 1.2 V to 2.5 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, with drain-source breakdown voltage rated 30 V (VDS) and continuous drain current of 60 A at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, serving as the reference for the VGS and VDS ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 40 | A | TC=100℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 13.6 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 11.4 | A | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 110 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 57.8 | mJ | 1 | |||
| Avalanche Current | IAS | 34 | A | 1 | |||
| Total Power Dissipation | PD | 41 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 2.42 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 9 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14 | Ω | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2.2 | 3.5 | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 12.6 | 17.6 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | |
| Gate-Source Charge | Qgs | 4.2 | 5.9 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | |
| Gate-Drain Charge | Qgd | 5.1 | 7.1 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | |
| Turn-On Delay Time | Td(on) | 4.6 | 9.2 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Rise Time | Tr | 12.2 | 22 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Turn-Off Delay Time | Td(off) | 26.6 | 53 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Fall Time | Tf | 8 | 16 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Input Capacitance | Ciss | 1317 | 1843 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 163 | 228 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 131 | 183 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 55 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 110 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AOD4144-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
aod4144-hxy-etched.step/aod4144-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod4144-hxy.step/aod4144-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d036fd7f57f8d3ab, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).