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AO7800-VB

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VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO7800-VB

VBsemi Elec · MOSFETs · SC-70-6

AO7800-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the channel-1 N-MOSFET; the absolute maximum drain-source voltage is 20 V and gate-source voltage is ±12 V.
2 G1 input Gate terminal of the channel-1 N-MOSFET; gate-source voltage is rated ±12 V absolute maximum.
3 D2 passive Drain terminal of the channel-2 N-MOSFET; drain-source voltage is rated 20 V absolute maximum.
4 S2 passive Source terminal of the channel-2 N-MOSFET; the absolute maximum drain-source voltage is 20 V and gate-source voltage is ±12 V.
5 G2 input Gate terminal of the channel-2 N-MOSFET; gate-source voltage is rated ±12 V absolute maximum.
6 D1 passive Drain terminal of the channel-1 N-MOSFET; drain-source voltage is rated 20 V absolute maximum.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC-70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 2.6 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 2.2 A TC = 70 °C 1
Continuous Drain Current ID 2.3 A TA = 25 °C 1
Continuous Drain Current ID 1.8 A TA = 70 °C 1
Pulsed Drain Current IDM 8 A 1
Continuous Source-Drain Diode Current IS 2.3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C 1
Maximum Power Dissipation PD 2.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.7 W TC = 70 °C 1
Maximum Power Dissipation PD 1.5 W TA = 25 °C 1
Maximum Power Dissipation PD 1 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 130 170 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient (steady state, note d) RthJA 220 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) RthJF 80 100 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.5 2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -25 25 µA VDS = 0 V, VGS = ±8 V 2
Gate-Source Leakage IGSS 1 µA VDS = 0 V, VGS = ±4.5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 4 A VDS ≤ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.086 Ω VGS = 4.5 V, ID = 1 A 2
Drain-Source On-State Resistance RDS(on) 0.11 Ω VGS = 2.5 V, ID = 1 A 2
Drain-Source On-State Resistance RDS(on) 0.18 Ω VGS = 1.8 V, ID = 0.2 A 2
Gate Resistance Rg 0.4 1.9 3.8 kΩ f = 1 MHz 2
Turn-On Delay Time td(on) 43 65 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 80 120 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 480 720 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 220 330 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 22 33 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω 2
Rise Time tr 46 70 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 645 968 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω 2
Fall Time tr 215 323 ns VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.6 A TC = 25 °C 2
Pulse Diode Forward Current ISM 4 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 1.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Charge Qrr 2 4 nC IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: AO7800-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6 (KiCad packages3D, STEP)
  • 3D model files: ao7800-vb-etched.step / ao7800-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao7800-vb.step / ao7800-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 5cbd6b3a0c7ff562, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF