component
AO7800-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SC-70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO7800-VB
VBsemi Elec · MOSFETs · SC-70-6
AO7800-VB from VBsemi Elec, in a SC-70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the channel-1 N-MOSFET; the absolute maximum drain-source voltage is 20 V and gate-source voltage is ±12 V. |
| 2 | G1 | input | Gate terminal of the channel-1 N-MOSFET; gate-source voltage is rated ±12 V absolute maximum. |
| 3 | D2 | passive | Drain terminal of the channel-2 N-MOSFET; drain-source voltage is rated 20 V absolute maximum. |
| 4 | S2 | passive | Source terminal of the channel-2 N-MOSFET; the absolute maximum drain-source voltage is 20 V and gate-source voltage is ±12 V. |
| 5 | G2 | input | Gate terminal of the channel-2 N-MOSFET; gate-source voltage is rated ±12 V absolute maximum. |
| 6 | D1 | passive | Drain terminal of the channel-1 N-MOSFET; drain-source voltage is rated 20 V absolute maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 2.6 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 2.2 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | 1.8 | A | TA = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 2.3 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 130 | 170 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient (steady state, note d) | RthJA | 220 | °C/W | Steady state | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 80 | 100 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -25 | 25 | µA | VDS = 0 V, VGS = ±8 V | 2 | |
| Gate-Source Leakage | IGSS | 1 | µA | VDS = 0 V, VGS = ±4.5 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 4 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.086 | Ω | VGS = 4.5 V, ID = 1 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.11 | Ω | VGS = 2.5 V, ID = 1 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.18 | Ω | VGS = 1.8 V, ID = 0.2 A | 2 | ||
| Gate Resistance | Rg | 0.4 | 1.9 | 3.8 | kΩ | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 43 | 65 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 80 | 120 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 480 | 720 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 220 | 330 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 22 | 33 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 46 | 70 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 645 | 968 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Fall Time | tr | 215 | 323 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.6 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 4 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.2 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2 | 4 | nC | IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
AO7800-VB - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70-6 (KiCad packages3D, STEP)
- 3D model files:
ao7800-vb-etched.step/ao7800-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao7800-vb.step/ao7800-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
5cbd6b3a0c7ff562, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).