component
AO6706-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| ao6706-vb-etched.glb | 4d ago |
| ao6706-vb-etched.step | 4d ago |
| ao6706-vb-hero.glb | 4d ago |
| ao6706-vb-hero.overlay.json | 4d ago |
| ao6706-vb.glb | 4d ago |
| ao6706-vb.kicad_mod | 4d ago |
| ao6706-vb.kicad_sym | 4d ago |
| ao6706-vb.lbr | 4d ago |
| ao6706-vb.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
| verification.json | 4d ago |
AO6706-VB
VBsemi Elec · MOSFETs · TSOP-6
AO6706-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Schottky diode anode, rated for 20V reverse voltage and 1A forward current (VF < 0.5V at 0.5A). |
| 2 | S | passive | MOSFET source of the N-channel device (VDS 20V, ID 6.0A continuous at TA=25°C). |
| 3 | G | input | MOSFET gate, absolute maximum gate-source voltage ±8V with RDS(ON) specified at VGS of 4.5V, 2.5V and 1.8V. |
| 4 | K | passive | Schottky diode cathode, rated for 20V reverse voltage (VKA). |
| 5 | N/C | unconnected | No connection. |
| 6 | D | passive | MOSFET drain, rated for 20V drain-source voltage and 6.0A continuous drain current at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 6 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 18 | A | 1 | |||
| Schottky reverse voltage | VKA | 20 | V | 1 | |||
| Continuous Forward Current | IF | 2 | A | TA=25°C | 1 | ||
| Continuous Forward Current | IF | 1 | A | TA=70°C | 1 | ||
| Pulsed Forward Current | IFM | 10 | A | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient MOSFET t≤10s | RθJA | 80.3 | 110 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient MOSFET Steady-State | RθJA | 117 | 150 | °C/W | Steady-state | 1 | |
| Maximum Junction-to-Lead MOSFET Steady-State | RθJL | 43 | 80 | °C/W | Steady-state | 1 | |
| Maximum Junction-to-Ambient Schottky t≤10s | RθJA | 109.4 | 135 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient Schottky Steady-State | RθJA | 136.5 | 175 | °C/W | Steady-state | 1 | |
| Maximum Junction-to-Lead Schottky Steady-State | RθJL | 58.5 | 80 | °C/W | Steady-state | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=16V, VGS=0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=16V, VGS=0V, TJ=55°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 42 | µA | VDS=16V, VGS=0V, TJ=125°C | 2 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±8V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.4 | 1.5 | V | VDS=VGS, ID=250µA | 2 | |
| On state drain current | ID(ON) | 10 | A | VGS=4.5V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 23 | 27 | mΩ | VGS=4.5V, ID=3.8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 40 | mΩ | VGS=2.5V, ID=3.3A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 1.8 | A | 2 | |||
| Schottky Forward Voltage Drop | VF | 0.39 | 0.5 | V | IF=0.5A | 2 | |
| Schottky Maximum reverse leakage current | Irm | 0.02 | mA | VR=16V | 2 | ||
| Schottky Maximum reverse leakage current | Irm | 20 | mA | VR=16V, TJ=125°C | 2 | ||
| Schottky Body Diode Reverse Recovery Time | trr | 5.2 | 10 | ns | IF=1A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO6706-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
ao6706-vb-etched.step/ao6706-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao6706-vb.step/ao6706-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
66d6b8fcc8fcd781, retrieved 2026-11-08, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).