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AO6706-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorao6706-vbfactory-2.0.0extractor-text

Verified AO6706-VB

by Ray · last 8 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

8 Nov 2026RayPublished by the parts factory: tier lcsc, 6 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AO6706-VB · TSOP-6 · 6 pins
  • ✓copper: 6 copper pads, none touching another net
  • ✓datasheet: all 6 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TSOP-6_1.65x3.05mm_P0.95mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-dn5jhtpa/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 6 pins = 6 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 6 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ao6706-vb.kicad_sym✓ ao6706-vb.kicad_mod✓ ao6706-vb.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

AO6706-VB

VBsemi Elec · MOSFETs · TSOP-6

AO6706-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Schottky diode anode, rated for 20V reverse voltage and 1A forward current (VF < 0.5V at 0.5A).
2 S passive MOSFET source of the N-channel device (VDS 20V, ID 6.0A continuous at TA=25°C).
3 G input MOSFET gate, absolute maximum gate-source voltage ±8V with RDS(ON) specified at VGS of 4.5V, 2.5V and 1.8V.
4 K passive Schottky diode cathode, rated for 20V reverse voltage (VKA).
5 N/C unconnected No connection.
6 D passive MOSFET drain, rated for 20V drain-source voltage and 6.0A continuous drain current at TA=25°C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID 6 A TA=25°C 1
Continuous Drain Current ID 4.5 A TA=70°C 1
Pulsed Drain Current IDM 18 A 1
Schottky reverse voltage VKA 20 V 1
Continuous Forward Current IF 2 A TA=25°C 1
Continuous Forward Current IF 1 A TA=70°C 1
Pulsed Forward Current IFM 10 A 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient MOSFET t≤10s RθJA 80.3 110 °C/W t≤10s 1
Maximum Junction-to-Ambient MOSFET Steady-State RθJA 117 150 °C/W Steady-state 1
Maximum Junction-to-Lead MOSFET Steady-State RθJL 43 80 °C/W Steady-state 1
Maximum Junction-to-Ambient Schottky t≤10s RθJA 109.4 135 °C/W t≤10s 1
Maximum Junction-to-Ambient Schottky Steady-State RθJA 136.5 175 °C/W Steady-state 1
Maximum Junction-to-Lead Schottky Steady-State RθJL 58.5 80 °C/W Steady-state 1
Drain-Source Breakdown Voltage BVDSS 20 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=16V, VGS=0V, TJ=25°C 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=16V, VGS=0V, TJ=55°C 2
Zero Gate Voltage Drain Current IDSS 42 µA VDS=16V, VGS=0V, TJ=125°C 2
Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±8V 2
Gate Threshold Voltage VGS(th) 0.4 1.5 V VDS=VGS, ID=250µA 2
On state drain current ID(ON) 10 A VGS=4.5V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 23 27 mΩ VGS=4.5V, ID=3.8A 2
Static Drain-Source On-Resistance RDS(ON) 40 mΩ VGS=2.5V, ID=3.3A 2
Diode Forward Voltage VSD 0.8 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 1.8 A 2
Schottky Forward Voltage Drop VF 0.39 0.5 V IF=0.5A 2
Schottky Maximum reverse leakage current Irm 0.02 mA VR=16V 2
Schottky Maximum reverse leakage current Irm 20 mA VR=16V, TJ=125°C 2
Schottky Body Diode Reverse Recovery Time trr 5.2 10 ns IF=1A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AO6706-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ao6706-vb-etched.step / ao6706-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao6706-vb.step / ao6706-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 66d6b8fcc8fcd781, retrieved 2026-11-08, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF