# AO4882-HXY

**HXY MOSFET** · MOSFETs · SOP-8

AO4882-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the device is rated VDS 40 V and continuous drain current ID 8 A at TA=25°C. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated VGS ±20 V (absolute maximum +20 V), with RDS(ON) specified at VGS=4.5 V and 10 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the device is rated VDS 40 V and continuous drain current ID 8 A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated VGS ±20 V (absolute maximum +20 V), with RDS(ON) specified at VGS=4.5 V and 10 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second drain pin, internally common with pin 5); drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
| 7 | D1 | passive | Drain terminal of MOSFET 1 (second drain pin, internally common with pin 8); drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
| 8 | D1 | passive | Drain terminal of MOSFET 1; drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V | Tj=25oC | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V | Tj=25oC | 1 |
| Drain Current (TA=25℃) | ID |  |  | 8 | A | VGS @ 4.5V | 1 |
| Drain Current (TA=70℃) | ID |  |  | 6 | A | VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM |  |  | 36 | A | Tj=25oC | 1 |
| Total Power Dissipation | PD |  |  | 1.9 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a |  |  | 40 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V , ID=250uA | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△T |  | 0.032 |  | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 16 | 20 | mΩ | VGS=10V , ID=7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 20 | 26 | mΩ | VGS=4.5V , ID=6A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -4.8 |  | mV/℃ |  | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=32V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=32V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 8 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 36 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| Forward Transconductance | gfs |  | 32 |  | S | VDS=5V , ID=7A | 2 |
| Gate Resistance | Rg |  | 2.1 |  |  | VDS=0V , VGS=0V , f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg |  | 9.8 |  | nC | VDS=32V , VGS=4.5V , ID=7A | 2 |
| Gate-Source Charge | Qgs |  | 2.8 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 3.9 |  | nC |  | 2 |
| Turn-On Delay Time | Td(on) |  | 2.8 |  | ns | VDD=20V , VGS=10V , RG=3.3Ω , ID=7A | 2 |
| Rise Time | Tr |  | 40.4 |  | ns |  | 2 |
| Turn-Off Delay Time | Td(off) |  | 22.8 |  | ns |  | 2 |
| Fall Time | Tf |  | 6.4 |  | ns |  | 2 |
| Input Capacitance | Ciss |  | 1013 |  | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss |  | 107 |  | pF |  | 2 |
| Reverse Transfer Capacitance | Crss |  | 76 |  | pF |  | 2 |
| Reverse Recovery Time | trr |  | 10 |  | nS | IF=7A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 3.3 |  | nC |  | 2 |

## CAD (KiCad official)

- Symbol: `AO4882-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4882-hxy-etched.step` / `ao4882-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4882-hxy.step` / `ao4882-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757975406131720192) (6 pp, sha256 `da0f46ed69e118d2`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4882-hxy-datasheet.pdf)