component
AO4882-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4882-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4882-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; the device is rated VDS 40 V and continuous drain current ID 8 A at TA=25°C. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage is rated VGS ±20 V (absolute maximum +20 V), with RDS(ON) specified at VGS=4.5 V and 10 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; the device is rated VDS 40 V and continuous drain current ID 8 A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage is rated VGS ±20 V (absolute maximum +20 V), with RDS(ON) specified at VGS=4.5 V and 10 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second drain pin, internally common with pin 5); drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
| 7 | D1 | passive | Drain terminal of MOSFET 1 (second drain pin, internally common with pin 8); drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
| 8 | D1 | passive | Drain terminal of MOSFET 1; drain-source voltage is rated 40 V and drain current 8 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | Tj=25oC | 1 | ||
| Gate-Source Voltage | VGS | 20 | V | Tj=25oC | 1 | ||
| Drain Current (TA=25℃) | ID | 8 | A | VGS @ 4.5V | 1 | ||
| Drain Current (TA=70℃) | ID | 6 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | Tj=25oC | 1 | ||
| Total Power Dissipation | PD | 1.9 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 40 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V , ID=250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△T | 0.032 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=10V , ID=7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 20 | 26 | mΩ | VGS=4.5V , ID=6A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | -4.8 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=32V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 8 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 36 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Forward Transconductance | gfs | 32 | S | VDS=5V , ID=7A | 2 | ||
| Gate Resistance | Rg | 2.1 | VDS=0V , VGS=0V , f=1MHz | 2 | |||
| Total Gate Charge (4.5V) | Qg | 9.8 | nC | VDS=32V , VGS=4.5V , ID=7A | 2 | ||
| Gate-Source Charge | Qgs | 2.8 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.9 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 2.8 | ns | VDD=20V , VGS=10V , RG=3.3Ω , ID=7A | 2 | ||
| Rise Time | Tr | 40.4 | ns | 2 | |||
| Turn-Off Delay Time | Td(off) | 22.8 | ns | 2 | |||
| Fall Time | Tf | 6.4 | ns | 2 | |||
| Input Capacitance | Ciss | 1013 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 107 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 76 | pF | 2 | |||
| Reverse Recovery Time | trr | 10 | nS | IF=7A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 3.3 | nC | 2 |
CAD (KiCad official)
- Symbol:
AO4882-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4882-hxy-etched.step/ao4882-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4882-hxy.step/ao4882-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
da0f46ed69e118d2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).