# AO4616

**Alpha Omega Semicon** · MOSFETs · SOIC-8

AO4616 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the n-channel MOSFET (MOSFET 2), rated for 30V VDS and 8A continuous drain current at TA=25°C. |
| 2 | G2 | input | Gate of the n-channel MOSFET (MOSFET 2), ESD protected, with a ±20V maximum gate-source voltage. |
| 3 | S1 | passive | Source of the p-channel MOSFET (MOSFET 1), rated for -30V VDS and -7A continuous drain current at TA=25°C. |
| 4 | G1 | input | Gate of the p-channel MOSFET (MOSFET 1), with a ±20V maximum gate-source voltage. |
| 5 | D1 | passive | Drain of the p-channel MOSFET (MOSFET 1), tied internally to pin 6 and rated for -30V VDS. |
| 6 | D1 | passive | Drain of the p-channel MOSFET (MOSFET 1), tied internally to pin 5 and rated for -30V VDS. |
| 7 | D2 | passive | Drain of the n-channel MOSFET (MOSFET 2), tied internally to pin 8 and rated for 30V VDS. |
| 8 | D2 | passive | Drain of the n-channel MOSFET (MOSFET 2), tied internally to pin 7 and rated for 30V VDS. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS |  |  | 30 | V |  | 1 |
| Drain-Source Voltage (P-channel) | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-channel) | ID |  |  | 8 | A | TA=25°C | 1 |
| Continuous Drain Current (P-channel) | ID |  |  | -7 | A | TA=25°C | 1 |
| Continuous Drain Current (N-channel) | ID |  |  | 6.5 | A | TA=70°C | 1 |
| Continuous Drain Current (P-channel) | ID |  |  | -6 | A | TA=70°C | 1 |
| Pulsed Drain Current (N-channel) | IDM |  |  | 40 | A |  | 1 |
| Pulsed Drain Current (P-channel) | IDM |  |  | -40 | A |  | 1 |
| Avalanche Current (N-channel) | IAS, IAR |  |  | 19 | A |  | 1 |
| Avalanche Current (P-channel) | IAS, IAR |  |  | -18 | A |  | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 1.3 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (steady-state) | RθJA |  | 74 | 90 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead (steady-state) | RθJL |  | 32 | 40 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS |  |  | 5 | µA | VDS=30V, VGS=0V; TJ=55°C | 2 |
| Gate-Body Leakage Current (N-channel) | IGSS |  |  | 10 | µA | VDS=0V, VGS=±16V | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS, ID=250µA | 2 |
| On-State Drain Current (N-channel) | ID(ON) | 40 |  |  | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) |  | 16.5 | 20 | mΩ | VGS=10V, ID=8A | 2 |
| Static Drain-Source On-Resistance (N-channel, TJ=125°C) | RDS(ON) |  | 23 | 28 | mΩ | VGS=10V, ID=8A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) |  | 19.5 | 28 | mΩ | VGS=4.5V, ID=6A | 2 |
| Diode Forward Voltage (N-channel) | VSD |  | 0.75 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current (N-channel) | IS |  |  | 2.5 | A |  | 2 |
| Input Capacitance (N-channel) | Ciss | 600 | 740 | 888 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance (N-channel) | Coss | 77 | 110 | 145 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance (N-channel) | Crss | 50 | 82 | 115 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate Resistance (N-channel) | Rg | 0.5 | 1.1 | 1.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (N-channel, 10V) | Qg (10V) | 12 | 15 | 18 | nC | VGS=10V, VDS=15V, ID=8A | 2 |
| Total Gate Charge (N-channel, 4.5V) | Qg (4.5V) | 6 | 7.5 | 9 | nC |  | 2 |
| Body Diode Reverse Recovery Time (N-channel) | trr | 6 | 8 | 10 | ns | IF=8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge (N-channel) | Qrr | 14 | 18 | 22 | nC | IF=8A, dI/dt=500A/µs | 2 |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -30 |  |  | V | ID=-250µA, VGS=0V | 6 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS |  |  | -1 | µA | VDS=-30V, VGS=0V | 6 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS |  |  | -5 | µA | VDS=-30V, VGS=0V; TJ=55°C | 6 |
| Gate-Body Leakage Current (P-channel) | IGSS |  |  | 100 | nA | VDS=0V, VGS=±20V | 6 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1.4 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 6 |
| On-State Drain Current (P-channel) | ID(ON) | -40 |  |  | A | VGS=-10V, VDS=-5V | 6 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) |  | 17.5 | 22 | mΩ | VGS=-10V, ID=-7A | 6 |
| Static Drain-Source On-Resistance (P-channel, TJ=125°C) | RDS(ON) |  | 24.5 | 33 | mΩ | VGS=-10V, ID=-7A, TJ=125°C | 6 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) |  | 27.5 | 40 | mΩ | VGS=-4.5V, ID=-3.5A | 6 |
| Diode Forward Voltage (P-channel) | VSD |  | -0.75 | -1 | V | IS=-1A, VGS=0V | 6 |
| Maximum Body-Diode Continuous Current (P-channel) | IS |  |  | -2.5 | A |  | 6 |
| Input Capacitance (P-channel) | Ciss | 830 | 1040 | 1250 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| Output Capacitance (P-channel) | Coss | 125 | 180 | 235 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| Reverse Transfer Capacitance (P-channel) | Crss | 75 | 125 | 175 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| Gate Resistance (P-channel) | Rg | 2 | 4 | 6 | Ω | VGS=0V, VDS=0V, f=1MHz | 6 |
| Total Gate Charge (P-channel, 10V) | Qg (10V) | 15 | 19 | 23 | nC | VGS=10V, VDS=-15V, ID=-7A | 6 |
| Total Gate Charge (P-channel, 4.5V) | Qg (4.5V) | 7.5 | 9.6 | 12 | nC |  | 6 |
| Body Diode Reverse Recovery Time (P-channel) | trr |  | 11.5 | 15 | ns | IF=-7A, dI/dt=500A/µs | 6 |
| Body Diode Reverse Recovery Charge (P-channel) | Qrr |  | 25 | 32.5 | nC | IF=-7A, dI/dt=500A/µs | 6 |
| Forward Transconductance (N-channel) | gFS |  | 30 |  | S | VDS=5V, ID=8A | 2 |
| Forward Transconductance (P-channel) | gFS |  | 24 |  | S | VDS=-5V, ID=-7A | 6 |
| Gate Source Charge (N-channel) | Qgs |  | 2.5 |  | nC | VGS=10V, VDS=15V, ID=8A | 2 |
| Gate Source Charge (P-channel) | Qgs |  | 3.6 |  | nC | VGS=10V, VDS=-15V, ID=-7A | 6 |
| Gate Drain Charge (N-channel) | Qgd |  | 3 |  | nC | VGS=10V, VDS=15V, ID=8A | 2 |
| Gate Drain Charge (P-channel) | Qgd |  | 4.6 |  | nC | VGS=10V, VDS=-15V, ID=-7A | 6 |

## CAD (KiCad official)

- Symbol: `AO4616`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ao4616-etched.step` / `ao4616-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4616.step` / `ao4616.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879912677068800) (9 pp, sha256 `4ffb020924cbb92d`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4616-datasheet.pdf)