component
AO4616
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ao4616: specified limits as data (metadata.characteristics, 60 rows from the datasheet)
2 files changed
+795−1
README.md+67@@ -26,6 +26,73 @@ AO4616 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | | 1 |+| Drain-Source Voltage (P-channel) | VDS | | | -30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (N-channel) | ID | | | 8 | A | TA=25°C | 1 |+| Continuous Drain Current (P-channel) | ID | | | -7 | A | TA=25°C | 1 |+| Continuous Drain Current (N-channel) | ID | | | 6.5 | A | TA=70°C | 1 |+| Continuous Drain Current (P-channel) | ID | | | -6 | A | TA=70°C | 1 |+| Pulsed Drain Current (N-channel) | IDM | | | 40 | A | | 1 |+| Pulsed Drain Current (P-channel) | IDM | | | -40 | A | | 1 |+| Avalanche Current (N-channel) | IAS, IAR | | | 19 | A | | 1 |+| Avalanche Current (P-channel) | IAS, IAR | | | -18 | A | | 1 |+| Power Dissipation | PD | | | 2 | W | TA=25°C | 1 |+| Power Dissipation | PD | | | 1.3 | W | TA=70°C | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (steady-state) | RθJA | | 74 | 90 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Lead (steady-state) | RθJL | | 32 | 40 | °C/W | Steady-State | 1 |+| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | µA | VDS=30V, VGS=0V | 2 |+| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 5 | µA | VDS=30V, VGS=0V; TJ=55°C | 2 |+| Gate-Body Leakage Current (N-channel) | IGSS | | | 10 | µA | VDS=0V, VGS=±16V | 2 |+| Gate Threshold Voltage (N-channel) | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS, ID=250µA | 2 |+| On-State Drain Current (N-channel) | ID(ON) | 40 | | | A | VGS=10V, VDS=5V | 2 |+| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | | 16.5 | 20 | mΩ | VGS=10V, ID=8A | 2 |+| Static Drain-Source On-Resistance (N-channel, TJ=125°C) | RDS(ON) | | 23 | 28 | mΩ | VGS=10V, ID=8A, TJ=125°C | 2 |+| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | | 19.5 | 28 | mΩ | VGS=4.5V, ID=6A | 2 |+| Diode Forward Voltage (N-channel) | VSD | | 0.75 | 1 | V | IS=1A, VGS=0V | 2 |+| Maximum Body-Diode Continuous Current (N-channel) | IS | | | 2.5 | A | | 2 |+| Input Capacitance (N-channel) | Ciss | 600 | 740 | 888 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |+| Output Capacitance (N-channel) | Coss | 77 | 110 | 145 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |+| Reverse Transfer Capacitance (N-channel) | Crss | 50 | 82 | 115 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |+| Gate Resistance (N-channel) | Rg | 0.5 | 1.1 | 1.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+| Total Gate Charge (N-channel, 10V) | Qg (10V) | 12 | 15 | 18 | nC | VGS=10V, VDS=15V, ID=8A | 2 |+| Total Gate Charge (N-channel, 4.5V) | Qg (4.5V) | 6 | 7.5 | 9 | nC | | 2 |+| Body Diode Reverse Recovery Time (N-channel) | trr | 6 | 8 | 10 | ns | IF=8A, dI/dt=500A/µs | 2 |+| Body Diode Reverse Recovery Charge (N-channel) | Qrr | 14 | 18 | 22 | nC | IF=8A, dI/dt=500A/µs | 2 |+| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -30 | | | V | ID=-250µA, VGS=0V | 6 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -1 | µA | VDS=-30V, VGS=0V | 6 |+| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -5 | µA | VDS=-30V, VGS=0V; TJ=55°C | 6 |+| Gate-Body Leakage Current (P-channel) | IGSS | | | 100 | nA | VDS=0V, VGS=±20V | 6 |+| Gate Threshold Voltage (P-channel) | VGS(th) | -1.4 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 6 |+| On-State Drain Current (P-channel) | ID(ON) | -40 | | | A | VGS=-10V, VDS=-5V | 6 |+| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | | 17.5 | 22 | mΩ | VGS=-10V, ID=-7A | 6 |+| Static Drain-Source On-Resistance (P-channel, TJ=125°C) | RDS(ON) | | 24.5 | 33 | mΩ | VGS=-10V, ID=-7A, TJ=125°C | 6 |+| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | | 27.5 | 40 | mΩ | VGS=-4.5V, ID=-3.5A | 6 |+| Diode Forward Voltage (P-channel) | VSD | | -0.75 | -1 | V | IS=-1A, VGS=0V | 6 |+| Maximum Body-Diode Continuous Current (P-channel) | IS | | | -2.5 | A | | 6 |+| Input Capacitance (P-channel) | Ciss | 830 | 1040 | 1250 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |+| Output Capacitance (P-channel) | Coss | 125 | 180 | 235 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |+| Reverse Transfer Capacitance (P-channel) | Crss | 75 | 125 | 175 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |+| Gate Resistance (P-channel) | Rg | 2 | 4 | 6 | Ω | VGS=0V, VDS=0V, f=1MHz | 6 |+| Total Gate Charge (P-channel, 10V) | Qg (10V) | 15 | 19 | 23 | nC | VGS=10V, VDS=-15V, ID=-7A | 6 |+| Total Gate Charge (P-channel, 4.5V) | Qg (4.5V) | 7.5 | 9.6 | 12 | nC | | 6 |+| Body Diode Reverse Recovery Time (P-channel) | trr | | 11.5 | 15 | ns | IF=-7A, dI/dt=500A/µs | 6 |+| Body Diode Reverse Recovery Charge (P-channel) | Qrr | | 25 | 32.5 | nC | IF=-7A, dI/dt=500A/µs | 6 |+| Forward Transconductance (N-channel) | gFS | | 30 | | S | VDS=5V, ID=8A | 2 |+| Forward Transconductance (P-channel) | gFS | | 24 | | S | VDS=-5V, ID=-7A | 6 |+| Gate Source Charge (N-channel) | Qgs | | 2.5 | | nC | VGS=10V, VDS=15V, ID=8A | 2 |+| Gate Source Charge (P-channel) | Qgs | | 3.6 | | nC | VGS=10V, VDS=-15V, ID=-7A | 6 |+| Gate Drain Charge (N-channel) | Qgd | | 3 | | nC | VGS=10V, VDS=15V, ID=8A | 2 |+| Gate Drain Charge (P-channel) | Qgd | | 4.6 | | nC | VGS=10V, VDS=-15V, ID=-7A | 6 |+ ## CAD (KiCad official) - Symbol: `AO4616`
page.json+728−1@@ -178,6 +178,733 @@ "Package": "SOIC-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4ffb020924cbb92d",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-channel)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -7,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.5,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-channel)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-channel)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current (N-channel)",+ "symbol": "IAS, IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 19,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current (P-channel)",+ "symbol": "IAS, IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -18,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (steady-state)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 74,+ "max": 90,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Lead (steady-state)",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 32,+ "max": 40,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "ID=250µA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (N-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=30V, VGS=0V; TJ=55°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (N-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=0V, VGS=±16V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.8,+ "max": 2.4,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (N-channel)",+ "symbol": "ID(ON)",+ "kind": "electrical",+ "unit": "A",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS=10V, VDS=5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (N-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 16.5,+ "max": 20,+ "conditions": "VGS=10V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (N-channel, TJ=125°C)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 23,+ "max": 28,+ "conditions": "VGS=10V, ID=8A, TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (N-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 19.5,+ "max": 28,+ "conditions": "VGS=4.5V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.75,+ "max": 1,+ "conditions": "IS=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current (N-channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (N-channel)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": 600,+ "typ": 740,+ "max": 888,+ "conditions": "VGS=0V, VDS=15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (N-channel)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": 77,+ "typ": 110,+ "max": 145,+ "conditions": "VGS=0V, VDS=15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (N-channel)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": 50,+ "typ": 82,+ "max": 115,+ "conditions": "VGS=0V, VDS=15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (N-channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.5,+ "typ": 1.1,+ "max": 1.7,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-channel, 10V)",+ "symbol": "Qg (10V)",+ "kind": "electrical",+ "unit": "nC",+ "min": 12,+ "typ": 15,+ "max": 18,+ "conditions": "VGS=10V, VDS=15V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (N-channel, 4.5V)",+ "symbol": "Qg (4.5V)",+ "kind": "electrical",+ "unit": "nC",+ "min": 6,+ "typ": 7.5,+ "max": 9,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time (N-channel)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": 6,+ "typ": 8,+ "max": 10,+ "conditions": "IF=8A, dI/dt=500A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge (N-channel)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": 14,+ "typ": 18,+ "max": 22,+ "conditions": "IF=8A, dI/dt=500A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-channel)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "ID=-250µA, VGS=0V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-30V, VGS=0V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (P-channel)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VDS=-30V, VGS=0V; TJ=55°C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current (P-channel)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (P-channel)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.4,+ "typ": -2,+ "max": -2.5,+ "conditions": "VDS=VGS, ID=-250µA",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current (P-channel)",+ "symbol": "ID(ON)",+ "kind": "electrical",+ "unit": "A",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS=-10V, VDS=-5V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (P-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 17.5,+ "max": 22,+ "conditions": "VGS=-10V, ID=-7A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (P-channel, TJ=125°C)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 24.5,+ "max": 33,+ "conditions": "VGS=-10V, ID=-7A, TJ=125°C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (P-channel)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 27.5,+ "max": 40,+ "conditions": "VGS=-4.5V, ID=-3.5A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (P-channel)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.75,+ "max": -1,+ "conditions": "IS=-1A, VGS=0V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current (P-channel)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2.5,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (P-channel)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": 830,+ "typ": 1040,+ "max": 1250,+ "conditions": "VGS=0V, VDS=-15V, f=1MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (P-channel)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": 125,+ "typ": 180,+ "max": 235,+ "conditions": "VGS=0V, VDS=-15V, f=1MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (P-channel)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": 75,+ "typ": 125,+ "max": 175,+ "conditions": "VGS=0V, VDS=-15V, f=1MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (P-channel)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 2,+ "typ": 4,+ "max": 6,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-channel, 10V)",+ "symbol": "Qg (10V)",+ "kind": "electrical",+ "unit": "nC",+ "min": 15,+ "typ": 19,+ "max": 23,+ "conditions": "VGS=10V, VDS=-15V, ID=-7A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (P-channel, 4.5V)",+ "symbol": "Qg (4.5V)",+ "kind": "electrical",+ "unit": "nC",+ "min": 7.5,+ "typ": 9.6,+ "max": 12,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time (P-channel)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11.5,+ "max": 15,+ "conditions": "IF=-7A, dI/dt=500A/µs",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge (P-channel)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 25,+ "max": 32.5,+ "conditions": "IF=-7A, dI/dt=500A/µs",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (N-channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "VDS=5V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (P-channel)",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 24,+ "max": null,+ "conditions": "VDS=-5V, ID=-7A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge (N-channel)",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge (P-channel)",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.6,+ "max": null,+ "conditions": "VGS=10V, VDS=-15V, ID=-7A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge (N-channel)",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge (P-channel)",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4.6,+ "max": null,+ "conditions": "VGS=10V, VDS=-15V, ID=-7A",+ "source_page": 6,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +946,4 @@ "visibility": { "public": true }-}+}