# AO4614B-HXY

**HXY MOSFET** · MOSFETs · SOP-8

AO4614B-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS = 40V, ID = 6A. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS max ±20V and a threshold of 1.0 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS = -40V, ID = -6.5A. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS max ±20V and a threshold of -1.0 to -2.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied to pin 6, with RDS(ON) < 54mΩ at VGS = -10V. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied to pin 5, with pulsed drain current IDM of -22A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied to pin 8, with RDS(ON) < 34mΩ at VGS = 10V. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied to pin 7, with pulsed drain current IDM of 22A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS |  |  | 40 | V |  | 1 |
| Drain-Source Voltage (P-Ch) | VDS | -40 |  |  | V |  | 1 |
| Gate-Source Voltage (N-Ch) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Ch) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Ch) | ID@TA=25℃ |  |  | 6 | A | VGS @ 10V | 1 |
| Continuous Drain Current (N-Ch) | ID@TA=70℃ |  |  | 5.1 | A | VGS @ 10V | 1 |
| Continuous Drain Current (P-Ch) | ID@TA=25℃ | -6.5 |  |  | A | VGS @ 10V | 1 |
| Continuous Drain Current (P-Ch) | ID@TA=70℃ | -5.1 |  |  | A | VGS @ 10V | 1 |
| Pulsed Drain Current (N-Ch) | IDM |  |  | 22 | A |  | 1 |
| Pulsed Drain Current (P-Ch) | IDM | -22 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy (N-Ch) | EAS |  |  | 15.2 | mJ |  | 1 |
| Single Pulse Avalanche Energy (P-Ch) | EAS |  |  | 39 | mJ |  | 1 |
| Avalanche Current (N-Ch) | IAS |  |  | 15 | A |  | 1 |
| Avalanche Current (P-Ch) | IAS | -28 |  |  | A |  | 1 |
| Total Power Dissipation (N-Ch column) | PD@TA=25℃ |  |  | 1.5 | W | TA=25℃ | 1 |
| Total Power Dissipation (P-Ch column) | PD@TA=25℃ |  |  | 1.67 | W | TA=25℃ | 1 |
| Storage Temperature Range (N-Ch column) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Storage Temperature Range (P-Ch column) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (N-Ch column) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (P-Ch column) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 75 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 30 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 40 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) |  | 26 | 34 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) |  | 36 | 43 | mΩ | VGS=4.5V, ID=4A | 2 |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1 |  | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Ch, TJ=25℃) | IDSS |  |  | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (N-Ch, TJ=55℃) | IDSS |  |  | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-Ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current (N-Ch) | IS |  |  | 6.1 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current (N-Ch) | ISM |  |  | 23 | A |  | 2 |
| Diode Forward Voltage (N-Ch) | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -40 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) |  | 45 | 54 | mΩ | VGS=-10V, ID=-6A | 3 |
| Static Drain-Source On-Resistance (P-Ch) | RDS(ON) |  | 80 | 85 | mΩ | VGS=-4.5V, ID=-4A | 3 |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 |  | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Ch, TJ=25℃) | IDSS |  |  | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Ch, TJ=55℃) | IDSS |  |  | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-Ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Continuous Source Current (P-Ch) | IS |  |  | -6 | A | VG=VD=0V, Force Current | 3 |
| Pulsed Source Current (P-Ch) | ISM |  |  | -22 | A |  | 3 |
| Diode Forward Voltage (P-Ch) | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `AO4614B-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4614b-hxy-etched.step` / `ao4614b-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4614b-hxy.step` / `ao4614b-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758124070095601664) (9 pp, sha256 `ce616dcd367c14a7`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4614b-hxy-datasheet.pdf)