component

AO4614B-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsao4614b-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 15d ago
viewers ao4614b-hxy: viewers · Ray 15d ago
ao4614b-hxy-etched.glb Publish 0.1.0 · Ray 15d ago
ao4614b-hxy-etched.step ao4614b-hxy: factory component page (tier=lcsc) · Ray 15d ago
ao4614b-hxy-hero.glb ao4614b-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 15d ago
ao4614b-hxy-hero.overlay.json Publish 0.1.0 · Ray 15d ago
ao4614b-hxy.glb Publish 0.1.0 · Ray 15d ago
ao4614b-hxy.kicad_mod Publish 0.1.0 · Ray 15d ago
ao4614b-hxy.kicad_sym Publish 0.1.0 · Ray 15d ago
ao4614b-hxy.lbr Publish 0.1.0 · Ray 15d ago
ao4614b-hxy.step Publish 0.1.0 · Ray 15d ago
package.json Publish 0.1.0 · Ray 15d ago
page.json Set visibility: public · Ray 15d ago
README.md Publish 0.1.0 · Ray 15d ago

AO4614B-HXY

HXY MOSFET · MOSFETs · SOP-8

AO4614B-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated VDS = 40V, ID = 6A.
2 G1 input Gate of the N-channel MOSFET (Q1), with VGS max ±20V and a threshold of 1.0 to 2.5V.
3 S2 passive Source of the P-channel MOSFET (Q2), rated VDS = -40V, ID = -6.5A.
4 G2 input Gate of the P-channel MOSFET (Q2), with VGS max ±20V and a threshold of -1.0 to -2.5V.
5 D2 passive Drain of the P-channel MOSFET (Q2), tied to pin 6, with RDS(ON) < 54mΩ at VGS = -10V.
6 D2 passive Drain of the P-channel MOSFET (Q2), tied to pin 5, with pulsed drain current IDM of -22A.
7 D1 passive Drain of the N-channel MOSFET (Q1), tied to pin 8, with RDS(ON) < 34mΩ at VGS = 10V.
8 D1 passive Drain of the N-channel MOSFET (Q1), tied to pin 7, with pulsed drain current IDM of 22A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 40 V 1
Drain-Source Voltage (P-Ch) VDS -40 V 1
Gate-Source Voltage (N-Ch) VGS -20 20 V 1
Gate-Source Voltage (P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID@TA=25℃ 6 A VGS @ 10V 1
Continuous Drain Current (N-Ch) ID@TA=70℃ 5.1 A VGS @ 10V 1
Continuous Drain Current (P-Ch) ID@TA=25℃ -6.5 A VGS @ 10V 1
Continuous Drain Current (P-Ch) ID@TA=70℃ -5.1 A VGS @ 10V 1
Pulsed Drain Current (N-Ch) IDM 22 A 1
Pulsed Drain Current (P-Ch) IDM -22 A 1
Single Pulse Avalanche Energy (N-Ch) EAS 15.2 mJ 1
Single Pulse Avalanche Energy (P-Ch) EAS 39 mJ 1
Avalanche Current (N-Ch) IAS 15 A 1
Avalanche Current (P-Ch) IAS -28 A 1
Total Power Dissipation (N-Ch column) PD@TA=25℃ 1.5 W TA=25℃ 1
Total Power Dissipation (P-Ch column) PD@TA=25℃ 1.67 W TA=25℃ 1
Storage Temperature Range (N-Ch column) TSTG -55 150 ℃ 1
Storage Temperature Range (P-Ch column) TSTG -55 150 ℃ 1
Operating Junction Temperature Range (N-Ch column) TJ -55 150 ℃ 1
Operating Junction Temperature Range (P-Ch column) TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W 1
Thermal Resistance Junction-Case RθJC 30 ℃/W 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 26 34 mΩ VGS=10V, ID=5A 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 36 43 mΩ VGS=4.5V, ID=4A 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (N-Ch, TJ=25℃) IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (N-Ch, TJ=55℃) IDSS 5 uA VDS=32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current (N-Ch) IS 6.1 A VG=VD=0V, Force Current 2
Pulsed Source Current (N-Ch) ISM 23 A 2
Diode Forward Voltage (N-Ch) VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Ch) BVDSS -40 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 45 54 mΩ VGS=-10V, ID=-6A 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 80 85 mΩ VGS=-4.5V, ID=-4A 3
Gate Threshold Voltage (P-Ch) VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current (P-Ch, TJ=25℃) IDSS 1 uA VDS=-32V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current (P-Ch, TJ=55℃) IDSS 5 uA VDS=-32V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Continuous Source Current (P-Ch) IS -6 A VG=VD=0V, Force Current 3
Pulsed Source Current (P-Ch) ISM -22 A 3
Diode Forward Voltage (P-Ch) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: AO4614B-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4614b-hxy-etched.step / ao4614b-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4614b-hxy.step / ao4614b-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 ce616dcd367c14a7, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF