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AO4606-MS

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MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4606-MS

MSKSEMI · MOSFETs · SOP-8

AO4606-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the channel labelled S1 (N-channel side per the product summary); absolute maximum drain-source voltage is 30 V for the N-channel and continuous drain current is 6 A at TA=25°C.
2 G1 input Gate terminal of the channel labelled G1; gate-source voltage is rated ±20 V for both channels.
3 S2 passive Source terminal of the channel labelled S2 (P-channel side per the product summary); absolute maximum drain-source voltage is -30 V for the P-channel and continuous drain current is -5.5 A at TA=25°C.
4 G2 input Gate terminal of the channel labelled G2; gate-source voltage is rated ±20 V for both channels.
5 D2 passive Drain terminal of the channel labelled D2 (P-channel side); pulsed drain current is rated -30 A for the P-channel.
6 D2 passive Drain terminal of the channel labelled D2 (P-channel side); pulsed drain current is rated -30 A for the P-channel.
7 D1 passive Drain terminal of the channel labelled D1 (N-channel side); pulsed drain current is rated 30 A for the N-channel.
8 D1 passive Drain terminal of the channel labelled D1 (N-channel side); pulsed drain current is rated 30 A for the N-channel.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 30 V 2
Drain-Source Voltage (P-channel) VDS -30 V 2
Gate-Source Voltage (N-channel) VGS -20 20 V 2
Gate-Source Voltage (P-channel) VGS -20 20 V 2
Continuous Drain Current (N-channel) ID 6 A TA=25°C 2
Continuous Drain Current (P-channel) ID -5.5 A TA=25°C 2
Continuous Drain Current (N-channel) ID 5 A TA=70°C 2
Continuous Drain Current (P-channel) ID -4.3 A TA=70°C 2
Pulsed Drain Current (N-channel) IDM 30 A 2
Pulsed Drain Current (P-channel) IDM -30 A 2
Avalanche Current (N-channel) IAS, IAR 10 A 2
Avalanche Current (P-channel) IAS, IAR 23 A 2
Avalanche Energy (N-channel) EAS, EAR 5 mJ L=0.1mH 2
Avalanche Energy (P-channel) EAS, EAR 26 mJ L=0.1mH 2
Power Dissipation PD 2 W TA=25°C 2
Power Dissipation PD 1.3 W TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Junction-to-Ambient RθJA 48 62.5 °C/W t≤10s 2
Maximum Junction-to-Ambient (Steady-State) RθJA 74 90 °C/W Steady-State 2
Maximum Junction-to-Lead (Steady-State) RθJL 32 40 °C/W Steady-State 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 μA VDS=30V, VGS=0V 3
Zero Gate Voltage Drain Current (N-channel) IDSS 5 μA TJ=55°C 3
Gate-Body Leakage Current (N-channel) IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage (N-channel) VGS(th) 1.2 1.8 2.4 V VDS=VGS, ID=250μA 3
Static Drain-Source On-Resistance (N-channel) RDS(ON) 25 30 mΩ VGS=10V, ID=6A 3
Static Drain-Source On-Resistance (N-channel) RDS(ON) 40 48 mΩ VGS=10V, ID=6A, TJ=125°C 3
Static Drain-Source On-Resistance (N-channel) RDS(ON) 33.5 42 mΩ VGS=4.5V, ID=5A 3
Diode Forward Voltage (N-channel) VSD 0.76 1 V IS=1A, VGS=0V 3
Maximum Body-Diode Continuous Current (N-channel) IS 2.5 A 3
Input Capacitance (N-channel) Ciss 200 255 310 pF VGS=0V, VDS=15V, f=1MHz 3
Output Capacitance (N-channel) Coss 30 45 60 pF VGS=0V, VDS=15V, f=1MHz 3
Reverse Transfer Capacitance (N-channel) Crss 20 35 50 pF VGS=0V, VDS=15V, f=1MHz 3
Gate Resistance (N-channel) Rg 1.6 3.25 4.9 Ω VGS=0V, VDS=0V, f=1MHz 3
Total Gate Charge (N-channel) Qg(10V) 4 5.2 6 nC VGS=10V, VDS=15V, ID=6A 3
Total Gate Charge (N-channel) Qg(4.5V) 2 2.55 3 nC 3
Body Diode Reverse Recovery Time (N-channel) trr 8.5 12 ns IF=6A, dI/dt=100A/μs 3
Body Diode Reverse Recovery Charge (N-channel) Qrr 2.2 3 nC IF=6A, dI/dt=100A/μs 3
Drain-Source Breakdown Voltage (N-channel) BVDSS 30 V ID=250μA, VGS=0V 3
On-State Drain Current (N-channel) ID(ON) 30 A VGS=10V, VDS=5V 3
Forward Transconductance (N-channel) gFS 15 S VDS=5V, ID=6A 3
Gate Source Charge (N-channel) Qgs 0.85 nC 3
Gate Drain Charge (N-channel) Qgd 1.3 nC 3
Turn-On Delay Time (N-channel) tD(on) 4.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 3
Turn-On Rise Time (N-channel) tr 2.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 3
Turn-Off Delay Time (N-channel) tD(off) 14.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 3
Turn-Off Fall Time (N-channel) tf 3.5 ns VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 3

CAD (KiCad official)

  • Symbol: AO4606-MS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4606-ms-etched.step / ao4606-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4606-ms.step / ao4606-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (12 pp, sha256 b66511ee3e98e8c5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF