component
AO4606-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4606-MS
MSKSEMI · MOSFETs · SOP-8
AO4606-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the channel labelled S1 (N-channel side per the product summary); absolute maximum drain-source voltage is 30 V for the N-channel and continuous drain current is 6 A at TA=25°C. |
| 2 | G1 | input | Gate terminal of the channel labelled G1; gate-source voltage is rated ±20 V for both channels. |
| 3 | S2 | passive | Source terminal of the channel labelled S2 (P-channel side per the product summary); absolute maximum drain-source voltage is -30 V for the P-channel and continuous drain current is -5.5 A at TA=25°C. |
| 4 | G2 | input | Gate terminal of the channel labelled G2; gate-source voltage is rated ±20 V for both channels. |
| 5 | D2 | passive | Drain terminal of the channel labelled D2 (P-channel side); pulsed drain current is rated -30 A for the P-channel. |
| 6 | D2 | passive | Drain terminal of the channel labelled D2 (P-channel side); pulsed drain current is rated -30 A for the P-channel. |
| 7 | D1 | passive | Drain terminal of the channel labelled D1 (N-channel side); pulsed drain current is rated 30 A for the N-channel. |
| 8 | D1 | passive | Drain terminal of the channel labelled D1 (N-channel side); pulsed drain current is rated 30 A for the N-channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 30 | V | 2 | |||
| Drain-Source Voltage (P-channel) | VDS | -30 | V | 2 | |||
| Gate-Source Voltage (N-channel) | VGS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage (P-channel) | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (N-channel) | ID | 6 | A | TA=25°C | 2 | ||
| Continuous Drain Current (P-channel) | ID | -5.5 | A | TA=25°C | 2 | ||
| Continuous Drain Current (N-channel) | ID | 5 | A | TA=70°C | 2 | ||
| Continuous Drain Current (P-channel) | ID | -4.3 | A | TA=70°C | 2 | ||
| Pulsed Drain Current (N-channel) | IDM | 30 | A | 2 | |||
| Pulsed Drain Current (P-channel) | IDM | -30 | A | 2 | |||
| Avalanche Current (N-channel) | IAS, IAR | 10 | A | 2 | |||
| Avalanche Current (P-channel) | IAS, IAR | 23 | A | 2 | |||
| Avalanche Energy (N-channel) | EAS, EAR | 5 | mJ | L=0.1mH | 2 | ||
| Avalanche Energy (P-channel) | EAS, EAR | 26 | mJ | L=0.1mH | 2 | ||
| Power Dissipation | PD | 2 | W | TA=25°C | 2 | ||
| Power Dissipation | PD | 1.3 | W | TA=70°C | 2 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 48 | 62.5 | °C/W | t≤10s | 2 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 74 | 90 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 32 | 40 | °C/W | Steady-State | 2 | |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | μA | VDS=30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | μA | TJ=55°C | 3 | ||
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=6A | 3 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 40 | 48 | mΩ | VGS=10V, ID=6A, TJ=125°C | 3 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 33.5 | 42 | mΩ | VGS=4.5V, ID=5A | 3 | |
| Diode Forward Voltage (N-channel) | VSD | 0.76 | 1 | V | IS=1A, VGS=0V | 3 | |
| Maximum Body-Diode Continuous Current (N-channel) | IS | 2.5 | A | 3 | |||
| Input Capacitance (N-channel) | Ciss | 200 | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Output Capacitance (N-channel) | Coss | 30 | 45 | 60 | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Reverse Transfer Capacitance (N-channel) | Crss | 20 | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 3 |
| Gate Resistance (N-channel) | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 |
| Total Gate Charge (N-channel) | Qg(10V) | 4 | 5.2 | 6 | nC | VGS=10V, VDS=15V, ID=6A | 3 |
| Total Gate Charge (N-channel) | Qg(4.5V) | 2 | 2.55 | 3 | nC | 3 | |
| Body Diode Reverse Recovery Time (N-channel) | trr | 8.5 | 12 | ns | IF=6A, dI/dt=100A/μs | 3 | |
| Body Diode Reverse Recovery Charge (N-channel) | Qrr | 2.2 | 3 | nC | IF=6A, dI/dt=100A/μs | 3 | |
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 | V | ID=250μA, VGS=0V | 3 | ||
| On-State Drain Current (N-channel) | ID(ON) | 30 | A | VGS=10V, VDS=5V | 3 | ||
| Forward Transconductance (N-channel) | gFS | 15 | S | VDS=5V, ID=6A | 3 | ||
| Gate Source Charge (N-channel) | Qgs | 0.85 | nC | 3 | |||
| Gate Drain Charge (N-channel) | Qgd | 1.3 | nC | 3 | |||
| Turn-On Delay Time (N-channel) | tD(on) | 4.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 3 | ||
| Turn-On Rise Time (N-channel) | tr | 2.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 3 | ||
| Turn-Off Delay Time (N-channel) | tD(off) | 14.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 3 | ||
| Turn-Off Fall Time (N-channel) | tf | 3.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 3 |
CAD (KiCad official)
- Symbol:
AO4606-MS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4606-ms-etched.step/ao4606-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4606-ms.step/ao4606-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (12 pp, sha256
b66511ee3e98e8c5, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).