# AO4453-VB

**VBsemi Elec** · MOSFETs · SO-8

AO4453-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; continuous source current (diode conduction) is -2.7 A (10 s) / -1.36 A (steady state). |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the same source as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS absolute maximum is ±8 V with threshold VGS(th) of -0.5 to -1.0 V at ID = -600 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS maximum is -12 V and pulsed drain current is -50 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -12 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V | TA = 25 °C | 1 |
| Continuous Drain Current 10 s | ID | -16 |  |  | A | TJ = 150 °C, TA = 25 °C, t ≤ 10 s | 1 |
| Continuous Drain Current Steady State | ID | -10 |  |  | A | TJ = 150 °C, TA = 25 °C, steady state | 1 |
| Continuous Drain Current 10 s | ID | -11.5 |  |  | A | TJ = 150 °C, TA = 70 °C, t ≤ 10 s | 1 |
| Continuous Drain Current Steady State | ID | -8 |  |  | A | TJ = 150 °C, TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM |  |  | -50 | A |  | 1 |
| Continuous Source Current 10 s | IS |  |  | -2.7 | A | Diode conduction, t ≤ 10 s | 1 |
| Continuous Source Current Steady State | IS |  |  | -1.36 | A | Diode conduction, steady state | 1 |
| Maximum Power Dissipation 10 s | PD |  |  | 3 | W | TA = 25 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation Steady State | PD |  |  | 1.5 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation 10 s | PD |  |  | 1.9 | W | TA = 70 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation Steady State | PD |  |  | 0.95 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance 10 s | RthJA |  | 33 | 42 | °C/W | t ≤ 10 s | 1 |
| Junction-to-Ambient Thermal Resistance Steady State | RthJA |  | 70 | 84 | °C/W | Steady State | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF |  | 16 | 21 | °C/W | Steady State | 1 |
| Gate Threshold Voltage | VGS(th) | -0.5 |  | -1 | V | VDS = VGS, ID = -600 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -12 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = -12 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | -30 |  |  | A | VDS = -5 V, VGS = -4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.005 | Ω | VGS = -4.5 V, ID = -14 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.0065 | Ω | VGS = -2.5 V, ID = -13 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.01 | Ω | VGS = -1.8 V, ID = -12 A | 2 |
| Forward Transconductance | gfs |  | 80 |  | S | VDS = -6 V, ID = -14 A | 2 |
| Diode Forward Voltage | VSD |  | -0.6 | -1.1 | V | IS = -2.7 A, VGS = 0 V | 2 |
| Rise Time | tr |  | 235 | 350 | ns | VDD = -6 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 410 | 620 | ns | VDD = -6 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |
| Fall Time | tf |  | 285 | 430 | ns | VDD = -6 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr |  | 180 | 270 | ns | IF = -2.1 A, dI/dt = 100 A/µs | 2 |
| Gate-Source Charge | Qgs |  | 15 |  | nC | VDS = -6 V, VGS = -5 V, ID = -14 A | 2 |
| Gate-Drain Charge | Qgd |  | 27.5 |  | nC | VDS = -6 V, VGS = -5 V, ID = -14 A | 2 |
| Gate Resistance | Rg |  | 3.6 |  | Ω |  | 2 |

## CAD (KiCad official)

- Symbol: `AO4453-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `ao4453-vb-etched.step` / `ao4453-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4453-vb.step` / `ao4453-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ao4453-vb-datasheet.pdf) (6 pp, sha256 `e4f70686fc53ec3e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4453-vb-datasheet.pdf)