component

AO4453-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsao4453-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7h ago
viewers ao4453-vb: viewers · Ray 7h ago
ao4453-vb-etched.glb Publish 0.1.0 · Ray 7h ago
ao4453-vb-etched.step ao4453-vb: factory component page (tier=lcsc) · Ray 7h ago
ao4453-vb-hero.glb ao4453-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 7h ago
ao4453-vb-hero.overlay.json Publish 0.1.0 · Ray 7h ago
ao4453-vb.glb Publish 0.1.0 · Ray 7h ago
ao4453-vb.kicad_mod Publish 0.1.0 · Ray 7h ago
ao4453-vb.kicad_sym Publish 0.1.0 · Ray 7h ago
ao4453-vb.lbr Publish 0.1.0 · Ray 7h ago
ao4453-vb.step Publish 0.1.0 · Ray 7h ago
package.json Publish 0.1.0 · Ray 7h ago
page.json Set visibility: public · Ray 7h ago
README.md Publish 0.1.0 · Ray 7h ago

AO4453-VB

VBsemi Elec · MOSFETs · SO-8

AO4453-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; continuous source current (diode conduction) is -2.7 A (10 s) / -1.36 A (steady state).
2 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 2.
4 G input Gate of the P-channel MOSFET; VGS absolute maximum is ±8 V with threshold VGS(th) of -0.5 to -1.0 V at ID = -600 µA.
5 D passive Drain of the P-channel MOSFET; VDS maximum is -12 V and pulsed drain current is -50 A.
6 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied to the same drain as pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V TA = 25 °C 1
Gate-Source Voltage VGS -8 8 V TA = 25 °C 1
Continuous Drain Current 10 s ID -16 A TJ = 150 °C, TA = 25 °C, t ≤ 10 s 1
Continuous Drain Current Steady State ID -10 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current 10 s ID -11.5 A TJ = 150 °C, TA = 70 °C, t ≤ 10 s 1
Continuous Drain Current Steady State ID -8 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM -50 A 1
Continuous Source Current 10 s IS -2.7 A Diode conduction, t ≤ 10 s 1
Continuous Source Current Steady State IS -1.36 A Diode conduction, steady state 1
Maximum Power Dissipation 10 s PD 3 W TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation Steady State PD 1.5 W TA = 25 °C, steady state 1
Maximum Power Dissipation 10 s PD 1.9 W TA = 70 °C, t ≤ 10 s 1
Maximum Power Dissipation Steady State PD 0.95 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance 10 s RthJA 33 42 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance Steady State RthJA 70 84 °C/W Steady State 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 16 21 °C/W Steady State 1
Gate Threshold Voltage VGS(th) -0.5 -1 V VDS = VGS, ID = -600 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -12 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -12 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) -30 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = -4.5 V, ID = -14 A 2
Drain-Source On-State Resistance RDS(on) 0.0065 Ω VGS = -2.5 V, ID = -13 A 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = -1.8 V, ID = -12 A 2
Forward Transconductance gfs 80 S VDS = -6 V, ID = -14 A 2
Diode Forward Voltage VSD -0.6 -1.1 V IS = -2.7 A, VGS = 0 V 2
Rise Time tr 235 350 ns VDD = -6 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 410 620 ns VDD = -6 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Fall Time tf 285 430 ns VDD = -6 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 180 270 ns IF = -2.1 A, dI/dt = 100 A/µs 2
Gate-Source Charge Qgs 15 nC VDS = -6 V, VGS = -5 V, ID = -14 A 2
Gate-Drain Charge Qgd 27.5 nC VDS = -6 V, VGS = -5 V, ID = -14 A 2
Gate Resistance Rg 3.6 Ω 2

CAD (KiCad official)

  • Symbol: AO4453-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4453-vb-etched.step / ao4453-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4453-vb.step / ao4453-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 e4f70686fc53ec3e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF