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page.json ao4443: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 16d ago
README.md ao4443: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 16d ago

AO4443

UMW · MOSFETs · SOP-8

AO4443 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are bonded together.
2 S passive SOURCE terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are bonded together.
3 S passive SOURCE terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are bonded together.
4 G input GATE terminal; gate-source voltage is rated to ±20 V per the absolute maximum ratings.
5 D passive DRAIN terminal; device drain-source voltage is rated -40 V with continuous drain current of -8 A at TC=25°C.
6 D passive DRAIN terminal; device drain-source voltage is rated -40 V with continuous drain current of -8 A at TC=25°C.
7 D passive DRAIN terminal; device drain-source voltage is rated -40 V with continuous drain current of -8 A at TC=25°C.
8 D passive DRAIN terminal; device drain-source voltage is rated -40 V with continuous drain current of -8 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -40 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-32V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -2 -3 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance (VGS=-10V) RDS(ON) 22 mΩ VGS=-10V, ID=-6A 2
Drain-Source On-State Resistance (VGS=-4.5V) RDS(ON) 25 mΩ VGS=-4.5V, ID=-5A 2
Source-Drain Current (Body Diode) ISD -20 A 2
Forward on Voltage VSD -1.2 V IS=-20A, VGS=0V 2
Drain-Source Voltage VDS -40 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -8 A TC=25°C 1
Drain Current-Continuous ID -5 A TC=100°C 1
Drain Current-Pulsed IDM(pluse) -20 A Note 1: pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 3.8 W TC=25°C 1
Maximum Power Dissipation PD 1.9 W TC=100°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Case RthJC 4 °C/W Junction-to-Case 1

CAD (KiCad official)

  • Symbol: AO4443
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4443-etched.step / ao4443-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4443.step / ao4443.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (7 pp, sha256 45fe9a7121093a29, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF